We review the recent developments in GaAs-based 1.55-mum lasers grown by molecular
beam epitaxy (MBE). While materials growth is challenging, the growth window appears to …

Growth and properties of GaNAsSb alloys are investigated and compared with those of other
dilute III–N–V alloys. Similar properties are observed including very high bandgap bowing …

Growth of GaInNAs by molecular beam epitaxy (MBE) generally requires a nitrogen plasma,
which complicates growth and can damage the wafer surface. Optical spectra from both …

A series of indium nitride (InN) thin films have been grown on sapphire substrates by
molecular beam epitaxy (MBE) technology under different growth conditions of temperature …

We have investigated N incorporation in Ga (As, N) grown by radio frequency (RF) plasma-
assisted molecular beam epitaxy in a wide range of N2 flow rate and RF power. Atomic and …

(In) GaAsN bulk layers and quantum wells usually demonstrate lower photoluminescence
intensity than the nitrogen-free compositions. In the present work we have carefully …

We have investigated growth of GaInNAs by MOCVD using dimethylhydrazine (DMHy) and
by CBE using RF-radical nitrogen. It was found that there was a large difference in nitrogen …

High-temperature pulsed operation of GaInNAs-GaAs double-quantum-well lasers grown by
chemical beam epitaxy has been demonstrated for the first time. The lasing wavelength was …

Molecular beam epitaxy (MBE) is an elegant material growth technique that is most simply
described as a very refined form of vacuum evaporation or physical vapor deposition, with …

We have studied the correlation between nitrogen composition of bulk GaAsN layers grown
by molecular beam epitaxy using rf plasma cell and photoluminescence (PL) intensity. We …