Gate dielectrics integration for 2D electronics: challenges, advances, and outlook

S Yang, K Liu, Y Xu, L Liu, H Li, T Zhai - Advanced Materials, 2023 - Wiley Online Library
Abstract 2D semiconductors have emerged both as an ideal platform for fundamental
studies and as promising channel materials in beyond‐silicon field‐effect‐transistors due to …

Plasma processing and treatment of 2D transition metal dichalcogenides: tuning properties and defect engineering

S Sovizi, S Angizi, SA Ahmad Alem, R Goodarzi… - Chemical …, 2023 - ACS Publications
Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for
fundamental nanoscale science and various technological applications. They are a …

Atomic layer deposition of metal oxides and chalcogenides for high performance transistors

C Shen, Z Yin, F Collins, N Pinna - Advanced Science, 2022 - Wiley Online Library
Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality
thin film materials at the nanoscale for applications in transistors. This review …

Surface functionalization of 2D transition metal oxides and dichalcogenides via covalent and non-covalent bonding for sustainable energy and biomedical …

J Azadmanjiri, P Kumar, VK Srivastava… - ACS Applied Nano …, 2020 - ACS Publications
The interest in two-dimensional (2D) nanomaterials has been increased rapidly after the
discovery of graphene. The 2D graphene analogs (2DGAs) with ultrathin-layered feature …

[HTML][HTML] Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2

E Schilirò, SE Panasci, AM Mio, G Nicotra… - Applied Surface …, 2023 - Elsevier
In this paper, the atomic layer deposition (ALD) of ultra-thin films (< 4 nm) of Al 2 O 3 and
HfO 2 on gold-supported monolayer (1L) MoS 2 is investigated, providing an insight on the …

Area-Selective Atomic Layer Deposition of TiN, TiO2, and HfO2 on Silicon Nitride with inhibition on Amorphous Carbon

E Stevens, Y Tomczak, BT Chan… - Chemistry of …, 2018 - ACS Publications
The demand for transistors and memory devices with smaller feature sizes and increasingly
complex architectures furthers the need for advanced thin film patterning techniques. A …

Scalably nanomanufactured atomically thin materials‐based wearable health sensors

R Zhang, J Jiang, W Wu - Small Structures, 2022 - Wiley Online Library
Wearable multimodal sensors could enable the continuous, non‐invasive, precise
monitoring of vital human signals critical for remote health monitoring and telemedicine …

[HTML][HTML] van der Waals epitaxy of 2D h-AlN on TMDs by atomic layer deposition at 250° C

SJ Chang, SY Wang, YC Huang, JH Chih… - Applied Physics …, 2022 - pubs.aip.org
We report the demonstration of growing two-dimensional (2D) hexagonal-AlN (h-AlN) on
transition metal dichalcogenide (TMD) monolayers (MoS 2, WS 2, and WSe 2) via van der …

Selective passivation of 2D TMD surface defects by atomic layer deposited Al2O3 to enhance recovery properties of gas sensor

I Sohn, S Wi, Y Kim, D Shin, M Kim, S Lee, H Yoon… - Applied Surface …, 2024 - Elsevier
The incomplete recovery of Transition Metal Dichalcogenides (TMD) based gas sensors
hinders their reliability and scalability. The leading cause of incomplete recovery is the …

Thermal conductivity of amorphous SiO2 by first-principles molecular dynamics

E Martin, G Ori, TQ Duong, M Boero… - Journal of Non-Crystalline …, 2022 - Elsevier
The approach-to-equilibrium molecular dynamics (AEMD) methodology implemented within
a first-principles molecular dynamics (FPMD) scheme is applied to amorphous SiO 2. In this …