[PDF][PDF] Impact of high-k insulators on electrical properties of junctionless double gate strained transistor

KE Kaharudin, F Salehuddin, ASM Zain… - Indonesian Journal of …, 2024 - researchgate.net
High-k dielectric insulators are required to reduce leakage and increase transistor
performance. They are able to impact the mobility of carriers in transistors positively, leading …

[PDF][PDF] New voltage and temperature scalable gate delay model applied to a 14nm technology

K Charafeddine, F Ouardi - Indonesian Journal of …, 2020 - pdfs.semanticscholar.org
The following work shows an innovative approach to model the timing of standard cells. By
using mathematical models instead of the classical SPICE-based characterization, a high …