Gate dielectric damage caused by both internal and external stresses is becoming worse
because of aggressive complementary metal–oxide–semiconductor (CMOS) scaling …

This work reports first original results on the impact of active in-situ electro-thermal recovery,
on the electrical and low-frequency noise characteristics of N-type MOS transistor with thick …

Higher device reliability and lower device-to-device variability are needed to improve the
density and yield of integrated circuits. A high pressure deuterium annealing (HPDA) …

Thermal distortion of a memory state is demonstrated for data sanitization of static random
access memory (SRAM). Data stored in SRAM are believed to be deleted when power is …