In recent years, because of stringent needs in the fabrication of silicon carbide (SiC) power
devices, laser annealing has been introduced to achieve local ohmic contact. In this paper …

This paper reports on the effects of excimer laser irradiation on an aluminum (Al)-doped
silicon carbide (4H-SiC) layer. Specifically, high-concentration (1× 1020 at/cm3) Al …

In this study, we investigated the characteristics of the n-type Ni/SiC ohmic contact using the
laser annealing process on thin wafers. The electrical behavior of the ohmic contacts was …

In this paper an overview on Power Packages challenges and technology approaches is
given. These challenges mainly originate from Silicon Carbide MOSFETs superior …

We investigated the complex interaction between a nickel layer and a 4H-SiC substrate
under UV-laser irradiation since the early stages of the atomic inter-diffusion. An exhaustive …

We present a method for the simulation of the kinetic evolution in the sub µs timescale for
composite materials containing regions occupied by alloys, compounds, and mixtures …

The formation of ohmic contacts by laser annealing approach is of great importance for SiC
power devices, since it allows their fabrication on thin substrates, that is of crucial …

Due to its exceptional physical properties, silicon carbide (SiC) is pivotal in the
semiconductor industry. Laser annealing technology is utilized to enhance ohmic contacts …

In this paper, we studied the electrical and structural properties of Cu/Ti/Al Ohmic contacts to
p-type 4 H-SiC with different annealing temperatures and Cu layer thicknesses. Compared …

Laser annealing process for ohmic contact formation on 4H-SiC has attracted increasing
attention in the last years, because it enables the fabrication of SiC power devices on very …