The paper considers heterogeneous 1-out-of-N warm standby systems when all
components can experience internal failures and operating components are exposed to …

This paper presents techniques for gate-oxide and middle-of-line (MOL) time-dependent
dielectric breakdown (TDDB) lifetime assessment of microprocessors and digital circuits …

Back-end wearout mechanisms are major reliability concerns for modern microprocessors.
In this paper, a framework that contains modules for back-end time-dependent dielectric …

Backend wearout mechanisms are major reliability concerns for modern microprocessors. In
this paper, a framework which contains modules for backend time-dependent dielectric …

As technology advances, Time-Dependent Dielectric Breakdown (TDDB) has become one
of the major reliability threats for Copper/low-k interconnects. This article presents a novel …

Time-dependent dielectric breakdown (TDDB) is one of the important failure mechanisms for
copper (Cu) interconnects. This problem becomes more severe as the pitch between wires …

This paper investigates not only the traditional reliability concern, frontend-of-line dielectric
breakdown (GTDDB), but also the newly emerging wearout mechanism, Middle-of-Line …

Time-dependent dielectric breakdown (TDDB) is one of the important failure mechanisms for
copper (Cu) interconnects. Many TDDB models have been proposed based on different …

In this paper, we have developed a framework to study wearout of state-of-the-art
microprocessor systems. Taking into account the detailed thermal and electrical stress …

Dielectric breakdown in low‐k dielectrics is considered one of the major reliability concerns
in advanced CMOS process development. The concerns have arisen because of a number …