The next-generation spintronic device demands the gated control of spin transport across the semiconducting channel through the replacement of the external gate voltage source by …
We present a comprehensive review of the emerging nanoscale ferroelectric materials used in novel nanoelectronics devices. First, we outline specific physical and electronic properties …
This article is dedicated to HfO2‐based ferroelectrics applications in nanoelectronics, especially to topics not well developed up to now, such as microwaves, energy harvesting …
Two-terminal devices based on an AlGaN/GaN nanochannel exhibit a significant hysteresis in their current–voltage curve due to their large surface-to-volume ratio. Surface effects at the …
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are highly promising nanomaterials for various electronic devices such as field-effect transistors, junction diodes …
Y Shi, Y Zhang, G Li - Journal of Physics D: Applied Physics, 2023 - iopscience.iop.org
Memristors are one of the most promising next-generation nonvolatile storage devices because of their unique structure and excellent performance. Transparent memristors with …
Geometric diodes (GDs) represent a relatively unconventional class of diode that produces an asymmetric current response through carrier transport in an asymmetric geometry …
M Aldrigo, M Dragoman, N Pelagalli… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
In this article, a two-atom-thick diode based on 2-D materials is presented for microwave detection. The diode consists of a molybdenum disulfide monolayer/graphene monolayer …