Materials research plays a vital role in transforming breakthrough scientific ideas into next‐
generation technology. Similar to the way silicon revolutionized the microelectronics …

Elements diffusing in semiconductors are frequently classified as" slow" or" fast" diffusers (1).
Slow diffusers have diffusion coefficients reasonably close to those of self-diffusion, whereas …

The paper consists of three parts. In the first part we review the basic experimental and
theoretical results which shaped our present knowledge on point defects and diffusion …

General trends in integrated circuit technology toward smaller device dimensions, lower
thermal budgets, and simplified processing steps present severe physical and engineering …

The transient supersaturation in a system undergoing Ostwald ripening is related to the
cluster formation energy E fc as a function of cluster size n. We use this relation to study the …

Abstract Experiments on Si-rich SiGe layers show an exponential increase in Ge diffusion
and an exponential decrease in B diffusion as a function of compressive strain, indicating a …

This practical book shows how an understanding of structure, thermodynamics, and
electrical properties can explain some of the choices of materials used in microelectronics …

The dependence of the solubilities and diffusion coefficients of Mn, Fe, and Co on doping
with B, P, and As in Si have been studied by the tracer method. An enhancement of the …

Lag die Industrie um 1970 bei Strukturbreiten von 4 bis 5 µm und Ausbeuten von
10%(teilweise darunter), so werden jetzt größtintegrierte Schaltkreise mit 2-µm-Strukturen …

Self-diffusion measurements in silicon are extended to the range 800–900 C by monitoring
30 Si diffusion in isotopically enriched structures. Comparing P, Sb, and self-diffusion under …