There is currently much activity toward the integration of mid-infrared semiconductor lasers
on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics …

The monolithic hetero-integration of III/V materials on Si substrates could enable a multitude
of new device applications and functionalities which would benefit from both the excellent …

In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

Systematically discusses the growth method, material properties, and applications for key
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …

The manuscript reports that the initial strain relaxation of highly mismatched GaSb layers
grown on GaAs (001) is governed by the two-dimensional (2D), periodic interfacial misfit …

With the continued maturation of III–V nanowire research, expectations of material quality
should be concomitantly raised. Ideally, III–V nanowires integrated on silicon should be …

We have investigated specifically designed GaSb-based laser diodes epitaxially grown on a
Si substrate. We demonstrate continuous-wave operation of these laser diodes emitting near …

This article reviews the major achievements in recent years on heteroepitaxy and selective
area heteroepitaxy that are relevant to silicon photonics. Material aspects are given due …

Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic
integration of lattice-mismatched III-V devices on Si substrates. It has been successfully …

The epitaxial integration of III–V optoelectronic devices on silicon will be the enabling
technology for full-scale deployment of silicon photonics and the key to improving …