This article describes the spatial variations of the shunt resistance in a-Si: H, PV cells across the absorber layer (i-layer). When the a-Si: H PV cell is illuminated through its front layer …
A Al Tarabsheh, M Akmal - 2019 6th International Conference …, 2019 - ieeexplore.ieee.org
In contrast to the existing conventional models, that describe the shunt resistance of hydrogenated amorphous silicon as a uniform resistance a cross the absorber layer (i-layer) …
In this work, the effect of the very low substrate temperature and hydrogen dilution on chemical, structural, and optical properties of polymorphous silicon thin films (pm-Si: H) …