This article continues the review of fundamental physical properties of iron and its
complexes in silicon (Appl. Phys. A 69, 13 (1999)), and is focused on ongoing applied …

Transition-metal contaminants are ubiquitous in Si devices, being introduced both during
wafer growth and in subsequent processing. 1–4 This is frequently detrimental because the …

We present a comprehensive summary of our observations of metal‐rich particles in
multicrystalline silicon (mc‐Si) solar cell materials from multiple vendors, including …

Synchrotron-based analytical microprobe techniques, electron backscatter diffraction, and
defect etching are combined to determine the dependence of metal silicide precipitate …

Silicon has remained the material of choice for both the microelectronic and photovoltaic
(PV) industries for a few decades. In addition to its abundance, silicon can be refined to an …

Photovoltaics is a promising but challenging opportunity for the environmentally clean
production of electric energy, as the cost of the produced energy is still too high to compete …

The effects of grain boundaries (GB) in polycrystalline sheet silicon on impurity gettering and
oxygen precipitation were investigated by electron beam induced current (EBIC), deep level …

Atomistic simulations of 18 silicon< 110> symmetric tilt grain boundaries are performed
using Stillinger Weber, Tersoff, and the optimized Modified Embedded Atom Method …

The availability of low-cost alternatives to electronic grade silicon has been and still is the
condition for the extensive use of photovoltaics as an efficient sun harvesting system. The …

An experimental study of the correlation between dislocations, grain orientation, and grain
boundaries in multicrystalline silicon (mc‐Si) bulk crystals is presented. Selected mc‐Si …