We investigate the formation of inner edge states and their transport properties in hybrid
nanoribbons. Some new inner edge states, such as spin-polarized, spin-valley-polarized …

We calculate the spin-dependent zero-bias conductance G σ σ′ in armchair graphene
nanoribbons with hydrogen adsorbates employing a DFT-based ab initio transport formalism …

In this work, we clarify the features of the lateral damage of line defects in single layer
graphene. The line defects were produced through well-controlled etching of graphene …

We present a systematic study of electron backscattering phenomena during conduction for
graphene nanoribbons with single-vacancy scatterers and dimensions within the …

Single-step nano-lithography was performed on graphene sheets using a helium ion
microscope. Parallel “defect” lines of∼ 1 μm length and≈ 5 nm width were written to form …

We present a tight-binding theory of the Dirac point resonances due to adsorbed atoms and
molecules on an infinite two-dimensional graphene sheet based on the standard tight …

Graphene nanoribbon field effect transistors are promising devices for beyond-CMOS
nanoelectronics. Graphene is a semiconductor material with zero bandgap and its bandgap …

The graphene nanoribbon (GNR) field effect transistor is one of the most competitive
candidates for beyond‐CMOS nanoelectronics because of the special electric …

We report peculiar charge and spin transport properties in S-shaped silicene junctions with
the Kane–Mele tight-binding model. In this work, we investigate the effects of electric and …

A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon
carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon …