We review the technology of Ge 1− x Sn x-related group-IV semiconductor materials for
developing Si-based nanoelectronics. Ge 1− x Sn x-related materials provide novel …

Metal silicides and their nanostructures have been found to be suitable candidates for
device manufacturing in contemporary microelectronics industries to reduce contact …

Alloying elements can substantially affect the formation and morphological stability of nickel
monosilicide. A comprehensive study of phase formation was performed on 24 Ni alloys with …

We present the data on specific silicide-to-silicon contact resistance (rho c) obtained using
optimized transmission-line model structures, processed for a broad range of various n-and …

In this study the current–voltage and capacitance–voltage characteristics of metal
semiconductor Ni/p-Si (100) based Schottky diode on p-type silicon measured over a wide …

Due to the constant downscaling of microelectronic devices, thin films of Ni-Pt monosilicide,
Ni (Pt) Si, are widely used as contact materials on the active regions of complementary metal …

To explore the potential of nickel-silicide: carbon (NiSi: C) as contact technology for
MOSFETs with silicon-carbon (Si: C) source/drain (S/D) regions, we examined the effects of …

Improving the thermal stability of Ni/GeSn intermetallics is of great importance to avoid
surface degradation and Sn segregation. For this purpose, we studied the effects of pre …

We report a new method of forming nickel silicide (NiSi) on n-Si with low contact resistance,
which achieves a Schottky barrier height of as low as 0.074 eV. Antimony (Sb) and nickel …

In this paper, a comparative study of C-, N-and Xe-based pre-amorphization implantation
(PAI) processes is proposed. The impact of the use of such processes on the agglomeration …