Rational design and synthesis of nanowires with increasingly complex structures can yield
enhanced and/or novel electronic and photonic functions,. For example, Ge/Si core/shell …

Deep-ultraviolet emitting structures based on Al 0.65 Ga 0.35 N/Al 0.8 Ga 0.2 N multiple
quantum wells (MQWs), embedded in compositionally graded Al x Ga 1-x N films in the form …

Herein, the optical field distribution and electrical property improvements of the InGaN laser
diode with an emission wavelength around 416 nm are theoretically investigated by …

Arrays of GaN-based nanowires have been synthesized on patterned silicon without a
catalyst. The spatial density, length and average radius of the nanowires can be well …

The performance characteristics of deep violet indium gallium nitride (InGaN) multiquantum
well (MQW) laser diodes (LDs) with an emission wavelength of around 390 nm have been …

In this paper, we calculated the optical fields for InxGa1− xN-multiquantum well (MQW) laser
structures. Two different optical cavities are compared, the conventional step separate …

The performance characteristics of deep violet InGaN DQW LDs by varying material and
thickness of compliance layer were numerically studied by ISE TCAD software. The In …

Quantum dots were designed within a GRIN-SCH (Graded index-Separate confinement
Heterostructure) heterostructure to create a high power InAlAs/AlGaAs laser diode. 808 nm …

We investigated the dependency of waveguide structures on ripples of far-field patterns in
405nm GaN-based laser diodes theoretically and experimentally. As the n-type cladding …

Embodiments of the present disclosure are directed towards a laser device with a stepped
graded index separate confinement heterostructure (SCH), in accordance with some …