High-mobility hydrogenated fluorine-doped indium oxide film for passivating contacts c-Si solar cells

C Han, L Mazzarella, Y Zhao, G Yang… - … applied materials & …, 2019 - ACS Publications
Broadband transparent conductive oxide layers with high electron mobility (μ e) are
essential to further enhance crystalline silicon (c-Si) solar cell performances. Although …

Coupled Process/Device Modeling and Point Defect Engineering of Cu(In,Ga)Se2 Solar Cells

X Xiang, DE Sommer, A Gehrke… - IEEE Journal of …, 2024 - ieeexplore.ieee.org
Point defects directly impact solar cell device performance by limiting the carrier lifetime. In
this work, density functional theory calculations are first used to determine the formation …

Defect Modeling and Device Optimization in Chalcogenide Photovoltaics from First Principles to AI-assisted Design

X Xiang - 2024 - search.proquest.com
This dissertation presents a comprehensive framework for defect modeling and device
optimization in chalcogenide photovoltaics, focusing on Cu (In, Ga) Se 2 (CIGS) and …

[引用][C] High-Mobility TCO-Based Contacting Schemes for c-Si Solar Cells

C Han - 2022 - PhD thesis, 2022, https://doi. org …