GaN green LEDs grown on the Si substrate are expected to become low-cost and high-
efficiency green light sources in future years, thus promoting the potential of GaN-on-Si …

A vertical-type InGaN light-emitting diode with a resonant cavity was demonstrated with a 9
μm aperture size and a short cavity formed by hybrid distributed Bragg reflectors (DBRs) …

Transferable Ga2O3 thin film membrane is desirable for vertical and flexible solar-blind
photonics and high-power electronics applications. However, Ga2O3 epitaxially grown on …

Gallium nitride (GaN) plays a vital role in the devices of many fields, including
communication, display, and lighting. The key to fabricating high-performance GaN devices …

Abstract The large-area (20.3 cm 2) NP-AlGaN DBRs, which are prepared via
electrochemical (EC) etching in an acid solution, present high reflectivity (> 90%) and wide …

Cu films with different thicknesses were deposited on GaN wafers with different doping
states. Several techniques were employed to study element, dislocation density and …

Abstract The langasite (La 3 Ga 5 SiO 14, LGS) is a nearly lattice-matched substrate for
epitaxy of GaN films. However, it is a challenge to grow GaN films on LGS substrates by …

Flexible AlGaInP-based red light-emitting diodes (LEDs) hold tremendous potential to
revolutionize wearable displays. In this work, we propose a method of preparing thin film red …

The ohmic contact of n-GaAs having surface treatment was achieved at 300° C. It shows that
surface treatment makes the GaAs easier to form an ohmic contact with Ni/Au/Ge/Ni/Au …

Epitaxial electrodeposition is a simple, low-cost technology to produce highly ordered
materials on single-crystal surfaces. This research focuses on the epitaxial electrodeposition …