Manufacturing metrology for c-Si photovoltaic module reliability and durability, Part I: Feedstock, crystallization and wafering

H Seigneur, N Mohajeri, RP Brooker, KO Davis… - … and Sustainable Energy …, 2016 - Elsevier
This article is the first in a three-part series of manufacturing metrology for c-Si photovoltaic
(PV) module reliability and durability. Here in Part 1 we focus on the three primary process …

Colloidal CuFeS2 Nanocrystals: Intermediate Fe d-Band Leads to High Photothermal Conversion Efficiency

S Ghosh, T Avellini, A Petrelli, I Kriegel… - Chemistry of …, 2016 - ACS Publications
We describe the colloidal hot-injection synthesis of phase-pure nanocrystals (NCs) of a
highly abundant mineral, chalcopyrite (CuFeS2). Absorption bands centered at around 480 …

Solar grade silicon feedstock

B Ceccaroli, O Lohne - Handbook of Photovoltaic Science and …, 2011 - Wiley Online Library
The Photovoltaic (PV) industry is still in its infancy and at the moment it is very difficult to
predict which technical, economical and social patterns its deployment will follow before …

Bulk minority carrier lifetimes and doping of silicon bricks from photoluminescence intensity ratios

B Mitchell, T Trupke, JW Weber, J Nyhus - Journal of Applied Physics, 2011 - pubs.aip.org
Two methods for spatially resolved measurement of the bulk minority carrier lifetime on the
side faces of block cast silicon bricks, both based on photoluminescence imaging, are …

Precipitated iron: A limit on gettering efficacy in multicrystalline silicon

DP Fenning, J Hofstetter, MI Bertoni, G Coletti… - Journal of Applied …, 2013 - pubs.aip.org
A phosphorus diffusion gettering model is used to examine the efficacy of a standard
gettering process on interstitial and precipitated iron in multicrystalline silicon. The model …

Determination of relative sensitivity factors for trace element analysis of solar cell silicon by fast-flow glow discharge mass spectrometry

M Di Sabatino, AL Dons, J Hinrichs… - Spectrochimica Acta Part B …, 2011 - Elsevier
A commercially available Element GD, the latest generation of glow discharge mass
spectrometry (GDMS), has been used for quantitative analysis of impurities in silicon for …

Effect of alternating magnetic field on the removal of metal impurities in silicon ingot by directional solidification

P Li, S Ren, D Jiang, J Li, L Zhang, Y Tan - Journal of Crystal Growth, 2016 - Elsevier
Multicrystalline silicon ingots without and with alternating magnetic field during directional
solidification process under industrial system were obtained from metallurgical grade silicon …

Si purity control and separation from Si–Al alloy melt with Zn addition

Y Li, Y Tan, J Li, K Morita - Journal of alloys and compounds, 2014 - Elsevier
During solidification refining of Si, the eutectic alloy ultimately solidifies and becomes
enriched with impurity elements according to their small segregation coefficients, which may …

Understanding the distribution of iron in multicrystalline silicon after emitter formation: Theoretical model and experiments

J Schön, H Habenicht, MC Schubert… - Journal of Applied …, 2011 - pubs.aip.org
We studied the behavior of iron in multicrystalline silicon during phosphorus diffusion by
spatially resolved measurements and physical modeling. We present improvements to the …

About the origin of low wafer performance and crystal defect generation on seed‐cast growth of industrial mono‐like silicon ingots

I Guerrero, V Parra, T Carballo, A Black… - Progress in …, 2014 - Wiley Online Library
The era of the seed‐cast grown monocrystalline‐based silicon ingots is coming. Mono‐like,
pseudomono or quasimono wafers are product labels that can be nowadays found in the …