Perfect surfaces can upgrade the quality of the films grown on them and ensure that their
physical properties do not deteriorate. Here, an atomically flattened surface is …

We demonstrated the creation of atomically ordered side-surfaces and examined the
perfection of the side-surface structures. Atomically reconstructed Si {100},{110}, and {111} …

The creation of atomically-ordered Si {111} 7× 7 facet structures on a Si (110) substrate is
realized for the first time. Au was deposited on atomically-flat {111} facet surfaces. The …

We compute the electron and hole mobilities in Trigate and gate-all-around silicon
nanowires (SiNWs) within the nonequilibrium Green's Function framework. We then derive a …

Silicon nanowires (SiNW) are quasi-one-dimensional structures in which the electrons are
spatially confined in two directions, and they are free to move along the axis of the wire. The …

The low-field hole mobility in p-type inversion-mode silicon (Si) and germanium (Ge)
nanosheet (NS) transistors is rigorously calculated by a physics-based theoretical model …

The present work performs molecular dynamics simulations within model potential's
framework to investigate surface atoms' rearrangements, loading states, and stress …

Abstract A three-dimensional Si {111} vertical side-surface structure on a Si (110) wafer was
fabricated by reactive ion etching (RIE) followed by wet-etching and flash-annealing …

We report that speed and energy efficiency of large-scale electronic structure simulations,
which target realistically sized systems consisting of multi-million atoms, can be hugely …

To meet comprehensive performance requirements of large workspace, lightweight, and low
energy consumption, and flexible supported industrial robots emerge, which are usually …