The radiation environment in space has severe adverse effects on electronic systems. To
evaluate radiation sensitivity, electronics are tested on earth with different types of irradiation …

Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high
power and high frequency applications, with higher breakdown voltages and two …

Advances in microelectronics performance and density continue to be fueled by the engine
of Moore's law. Although lately this engine appears to be running out of steam, recent …

The history of integrated circuit (IC) development is another record of human challenges
involving space. Efforts have been made to protect ICs from sudden malfunctions due to …

In this paper, we describe a Monte Carlo approach for estimating the frequency and
character of single event effects based on a combination of physical modeling of discrete …

This document describes the radiation environments, physical mechanisms, and test
philosophies that underpin radiation hardness assurance test methodologies. The natural …

The reliability of advanced integrated circuit (IC) technologies may be dominated by the
interaction of environmental radiation with the devices in the ICs. In particular, single event …

The effects of heavy ion energy and nuclear interactions on the single-event upset (SEU)
and single-event latchup (SEL) response of commercial and radiation-hardened CMOS ICs …

Experimental evidence and Monte-Carlo simulations for several technologies show that
accurate SEE response predictions depend on a detailed description of the variability of …

The effects of device orientation on heavy ion-induced multiple-bit upset (MBU) in 65 nm
SRAMs are examined. The MBU response is shown to depend on the orientation of the …