Recent advances in silicon-based passive and active optical interconnects

H Subbaraman, X Xu, A Hosseini, X Zhang, Y Zhang… - Optics express, 2015 - opg.optica.org
Silicon photonics has experienced phenomenal transformations over the last decade. In this
paper, we present some of the notable advances in silicon-based passive and active optical …

High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect

G Chen, Y Yu, Y Shi, N Li, W Luo, L Cao… - Laser & Photonics …, 2022 - Wiley Online Library
A photodetector (PD) converts optical signals into electrical ones and is widely used in
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …

Ge-photodetectors for Si-based optoelectronic integration

J Wang, S Lee - Sensors, 2011 - mdpi.com
High speed photodetectors are a key building block, which allow a large wavelength range
of detection from 850 nm to telecommunication standards at optical fiber band passes of 1.3 …

High speed carrier-depletion modulators with 1.4V-cm VπL integrated on 0.25μm silicon-on-insulator waveguides

NN Feng, S Liao, D Feng, P Dong, D Zheng, H Liang… - Optics express, 2010 - opg.optica.org
We demonstrate a very efficient high speed silicon modulator with an ultralow π-phase-shift
voltage-length product V_πL= 1.4 V-cm. The device is based on a Mach-Zehnder …

Widely tunable, low phase noise microwave source based on a photonic chip

M Merklein, B Stiller, IV Kabakova, US Mutugala… - Optics Letters, 2016 - opg.optica.org
Spectrally pure microwave sources are highly desired for several applications, ranging from
wireless communication to next generation radar technology and metrology. Additionally, to …

Ultra-efficient 10Gb/s hybrid integrated silicon photonic transmitter and receiver

X Zheng, D Patil, J Lexau, F Liu, G Li, H Thacker… - Optics …, 2011 - opg.optica.org
Using low parasitic microsolder bumping, we hybrid integrated efficient photonic devices
from different platforms with advanced 40 nm CMOS VLSI circuits to build ultra-low power …

30GHz Ge electro-absorption modulator integrated with 3μm silicon-on-insulator waveguide

NN Feng, D Feng, S Liao, X Wang, P Dong, H Liang… - Optics express, 2011 - opg.optica.org
We demonstrate a compact waveguide-based high-speed Ge electro-absorption (EA)
modulator integrated with a single mode 3µm silicon-on-isolator (SOI) waveguide. The Ge …

36 GHz submicron silicon waveguide germanium photodetector

S Liao, NN Feng, D Feng, P Dong, R Shafiiha… - Optics …, 2011 - opg.optica.org
We present two effective approaches to improve the responsivity of high speed waveguide-
based Ge photodetectors integrated on a 0.25 μm silicon-on-insulator (SOI) platform. The …

10-Gbps, 5.3-mW optical transmitter and receiver circuits in 40-nm CMOS

FY Liu, D Patil, J Lexau, P Amberg… - IEEE journal of solid …, 2012 - ieeexplore.ieee.org
We describe transmitter and receiver circuits for a 10-Gbps single-ended optical link in a 40-
nm CMOS technology. The circuits are bonded using low-parasitic micro-solder bumps to …

Low-error and broadband microwave frequency measurement in a silicon chip

M Pagani, B Morrison, Y Zhang, A Casas-Bedoya… - Optica, 2015 - opg.optica.org
Instantaneous frequency measurement (IFM) of microwave signals is a fundamental
functionality for applications ranging from electronic warfare to biomedical technology …