Polycrystalline lead selenide material that is processed after a sensitization technology
offers the additional physical effects of carrier recombination suppression and carrier …

Cadmium selenide (CdSe) is a promising semiconductor extensively used in manufacturing
optoelectronic devices. Compared to the undoped CdSe (Cu 1), the crystallite size of Cu 2 …

Lead Selenide thin films were prepared by vacuum evaporation technique with different
thickness ranges from 50 to 200 nm on glass substrates. The structural studies revealed that …

Nanocrystalline lead selenide (PbSe) thin films with varied thickness were deposited on
glass substrates by thermal evaporation technique. Physical and surface properties of PbSe …

PbSe nanocrystalline films were prepared by radio frequency (RF) magnetron sputtering
with different powers ranging from 40 to 100 W. The impact of RF power on the crystal …

Thin films of PbS x Se (1− x)(0≤ x≤ 1) have been deposited by spin coating of bis
(dodecylxanthato) lead (II)(1) and/or bis (N, N-diethyl-N′-naphthoylselenoureato) lead …

Abstract Se 90 Te 8 Pb 2 and Se 90 Te 4 Pb 6 compositions have been prepared in bulk and
thin film forms. Transmittance and reflectance have been measured for the investigated films …

In this work, thin films of Pb0. 9Sn0. 1Se were deposited by thermal vacuum evaporation
and pulsed laser deposition techniques. XRD measurements reveal a cubic crystalline …

Abstract Thin films of 5, 10, 15, 20-tetraphenyl-21H, 23H-porphine vanadium (IV) oxide,
VOTPP, were placed on glass with an overall thickness of 495 nm utilizing the thermal …

Over the past few decades, lead selenide (PbSe) thin films have been widely utilized in
infrared photonic devices owing to their narrow band gap, large exciton Bohr radius, high …