Load-pull techniques and their applications in power amplifiers design

FM Ghannouchi, MS Hashmi - 2011 IEEE Bipolar/BiCMOS …, 2011 - ieeexplore.ieee.org
This paper reviews and discusses most common load-pull techniques used in the design of
power amplifiers (PAs). It also discusses and elaborates on the specific change in load-pull …

[图书][B] Load-pull techniques with applications to power amplifier design

FM Ghannouchi, MS Hashmi - 2012 - books.google.com
This first book on load-pull systems is intended for readers with a broad knowledge of high
frequency transistor device characterization, nonlinear and linear microwave …

Dual-band RF circuits and components for multi-standard software defined radios

K Rawat, MS Hashmi… - IEEE Circuits and …, 2012 - ieeexplore.ieee.org
The advent of multi-standard and multi-band software defined radio (SDR) applications has
necessitated the design and deployment of dual-band RF components and circuits …

A load–pull characterization technique accounting for harmonic tuning

V Vadalà, A Raffo, S Di Falco, G Bosi… - IEEE Transactions …, 2013 - ieeexplore.ieee.org
A novel methodology for the characterization of the nonlinear dynamic behavior of electron
devices (EDs) is presented. It is based on a complete and accurate ED characterization that …

Double the band and optimize

K Rawat, MS Hashmi… - IEEE Microwave …, 2012 - ieeexplore.ieee.org
This article focuses on the design methodologies and performance optimization strategies of
dual-band DPA. The state of art in dual-band DPA has been demonstrated with further …

Introduction to load-pull systems and their applications

MS Hashmi, FM Ghannouchi - IEEE Instrumentation & …, 2013 - ieeexplore.ieee.org
Large-signal or non-linear characterization of transistor devices is essential for determining
their performance in such non-linear applications as power amplifiers (PAs), considering the …

Evaluation and reduction of calibration residual uncertainty in load-pull measurements at millimeter-wave frequencies

V Teppati, CR Bolognesi - IEEE Transactions on …, 2011 - ieeexplore.ieee.org
In this paper, a thorough evaluation of calibration residual uncertainty of on-wafer load-pull
systems at millimeter-wave frequencies, with actual comparisons between real-time and non …

A miniaturized WiMAX band 4-W class-F GaN HEMT power amplifier module

HC Jeong, HS Oh, KW Yeom - IEEE transactions on microwave …, 2011 - ieeexplore.ieee.org
In this paper, the design and fabrication of a miniaturized 4-W power amplifier for the WiMAX
frequency band (2.3-2.7 GHz) is presented. The selected active device is a commercially …

The best of both worlds: The dynamic load-modulation power amplifier

GT Watkins - IEEE Microwave Magazine, 2020 - ieeexplore.ieee.org
Mobile data traffic is expected to triple between 2018 and 2021 [1]. To meet past and future
growth targets in an increasingly limited electromagnetic spectrum, wireless …

A design of X-band 40 W pulse-driven GaN HEMT power amplifier

HC Jeong, KW Yeom - IEICE transactions on electronics, 2013 - search.ieice.org
In this paper, a systematic design of X-band (9–10 GHz) 40 W pulse-driven GaN HEMT
power amplifier is presented. The design includes device evaluation, verification of …