Achieving high mobility and reliability in atomic layer deposition (ALD)-based IGZO thin-film
transistors (TFTs) with an amorphous phase is vital for practical applications in relevant …

In this paper, we investigate the Vth shift of p-type LTPS TFTs fabricated on a polyimide (PI)
and glass substrate considering charging phenomena. The Vth of the LTPS TFTs with a PI …

In this study, a thin-film transistor with a heterogeneous channel structure was introduced
into oxide semiconductors to improve their electrical properties, which resulted in high …

Improving reliability of low-temperature polycrystalline silicon (LTPS) and amorphous indium-
gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs), components of low-temperature …

Flexible displays on a polyimide (PI) substrate are widely regarded as a promising next-
generation display technology due to their versatility in various applications. Among other …

This study successfully achieved the transfer characteristics of a transistor by utilizing an
ultrathin (~ 4 nm) indium zinc oxide (InZnO) channel. We explored optimal post-annealing …

The theory of oxygen vacancy related deep energy defects and valence band offset (VBO)
between gate insulator and channel codetermining the threshold voltage shift of ZnO thin …

The core integration and cooperation of the retina, neurons, and synapses in the visual
systems enable humans to effectively sense and process visual information with low power …

In previous research, it has been observed that the threshold voltage (V) in IGZO TFTs will
shift in the positive direction after the oxygen annealing treatment. However, in this study …

It is of the utmost importance to highlight the necessity of characterizing the operational
stabilities of vertical-channel thin-film transistors (VTFTs) using In-Ga-Zn-O (IGZO) channel …