Steep subthreshold swing (SS) is a decisive index for low energy consumption devices.
However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann …

In this paper, we present a fast and expandable artificial neural network (ANN)-based
compact model and parameter extraction flow to replace the existing complicated compact …

Al 0.68 Sc 0.32 N (AlScN) has gained attention for its outstanding ferroelectric properties,
including a high coercive field and high remnant polarization. Although AlScN-based …

Background An organic electrochemical transistor (OECT) is an important device in an area
of the art in bioelectronics that can convert ionic and biological inputs into electronic outputs …

Negative capacitance field-effect transistor (NCFET) is a potential device that has exhibited
an immense prospective to outplace conventional FETs because of their steep switching …

This paper explores the DC characteristics and trap analysis of single gate NCFET (SG-
NCFET) and highly doped double pocket double gate NCFET (HDDP-DG-NCFET) with …

Abstract sPower consumption has emerged as a central concern in the realm of
complementary metal‐oxide‐semiconductor (CMOS) technology. Silicon‐based …

We experimentally investigate capacitance response of a thick ferroelectric GeTe single-
crystal flake on the Si/SiO 2 substrate, where p-doped Si layer serves as a gate electrode …

Boltzmann limit is inevitable in conventional MOSFETs, which prevent them to be used for
low-power applications. Research in device physics can address this problem by selection …

In this paper, we present for the first time a field-effect-transistor (FET) having a 10 nm thick
tin sulfide (SnS) channel fabricated at the wafer scale with high reproducibility. SnS-based …