Large scale integrated IGZO crossbar memristor array based artificial neural architecture for scalable in-memory computing
Neuromorphic systems based on memristor arrays have not only addressed the von
Neumann bottleneck issue but have also enabled the development of computing …
Neumann bottleneck issue but have also enabled the development of computing …
Resistive switching performance improvement of InGaZnO-based memory device by nitrogen plasma treatment
L Zhang, Z Xu, J Han, L Liu, C Ye, Y Zhou… - Journal of Materials …, 2020 - Elsevier
With the demand of flat panel display development, utilizing the non-volatile memory
devices based on indium-gallium-zinc-oxide (IGZO) film may be integrated with IGZO thin …
devices based on indium-gallium-zinc-oxide (IGZO) film may be integrated with IGZO thin …
[HTML][HTML] Stochastic neuron based on IGZO Schottky diodes for neuromorphic computing
Neuromorphic architectures based on memristive neurons and synapses hold great
prospect in achieving highly intelligent and efficient computing systems. Here, we show that …
prospect in achieving highly intelligent and efficient computing systems. Here, we show that …
Vanishing space-charge effects in contact-limited thin-film diodes
Estimation of charge-carrier mobility and trap energy from a space-charge-limited-current
measurement is a well-established technique for the characterization of electronic materials …
measurement is a well-established technique for the characterization of electronic materials …
Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO2 Memory
KJ Heo, HS Kim, JY Lee, SJ Kim - Scientific Reports, 2020 - nature.com
In this study, molybdenum tungsten/amorphous InGaZnO (a-IGZO)/TiO2/n-type Si-based
resistive random access memory (ReRAM) is manufactured. After deposition of the a-IGZO …
resistive random access memory (ReRAM) is manufactured. After deposition of the a-IGZO …
Room temperature-processed a-IGZO Schottky diode for rectifying circuit and bipolar 1D1R crossbar applications
In this paper, we demonstrate a tunable Schottky diode based on amorphous indium-gallium-
zinc-oxide (a-IGZO) film with high performance for rectifying circuit and bipolar one diode …
zinc-oxide (a-IGZO) film with high performance for rectifying circuit and bipolar one diode …
IGZO/SnOx-based dynamic memristor with fading memory effect for reservoir computing
We investigate a synaptic device with short-term memory characteristics using IGZO/SnO x
as the switching layer. The thickness and components of each layer are analyzed by using x …
as the switching layer. The thickness and components of each layer are analyzed by using x …
Field-dependent mobility enhancement and contact resistance in a-IGZO TFTs
In this article, we performed gated four-probe measurements on amorphous indium gallium
zinc oxide (a-IGZO) thin-film transistors (TFTs) to extract their intrinsic mobility and contact …
zinc oxide (a-IGZO) thin-film transistors (TFTs) to extract their intrinsic mobility and contact …
Gradual conductance modulation by defect reorganization in amorphous oxide memristors
Amorphous oxides show great prospects in revolutionizing memristors benefiting from their
abundant non-stoichiometric composition. However, an in-depth investigation of the …
abundant non-stoichiometric composition. However, an in-depth investigation of the …
Bipolar resistive switching characteristics of a sol-gel InZnO oxide semiconductor
CC Hsu, CC Tsao, YH Chen, XZ Zhang - Physica B: Condensed Matter, 2019 - Elsevier
This paper investigates the bipolar resistive switching characteristics of a sol-gel Ga-free
InZnO (IZO) oxide semiconductor. Resistive random-access memories (RRAMs) using IZO …
InZnO (IZO) oxide semiconductor. Resistive random-access memories (RRAMs) using IZO …