Microstructural evolution of helium-irradiated 6H–SiC subjected to different irradiation conditions and annealing temperatures: A multiple characterization study
N Daghbouj, BS Li, M Callisti, HS Sen, M Karlik… - Acta Materialia, 2019 - Elsevier
The microstructural phenomena occurring in 6H–SiC subjected to different irradiation
conditions and annealing temperatures were investigated to assess the suitability of 6H–SiC …
conditions and annealing temperatures were investigated to assess the suitability of 6H–SiC …
The structural evolution of light-ion implanted 6H-SiC single crystal: Comparison of the effect of helium and hydrogen
The microstructure evolution of hydrogen-implanted 6H-SiC at different temperatures and
fluences is investigated by using various experimental techniques. In H-implanted samples …
fluences is investigated by using various experimental techniques. In H-implanted samples …
Interface-driven strain in heavy ion-irradiated Zr/Nb nanoscale metallic multilayers: validation of distortion modeling via local strain mapping
Nanolayered metallic alloys are promising materials for nuclear applications thanks to their
resistance to radiation damage. Here, we investigate the effect of ion (C, Si, and Cu) …
resistance to radiation damage. Here, we investigate the effect of ion (C, Si, and Cu) …
Interphase boundary layer-dominated strain mechanisms in Cu+ implanted Zr-Nb nanoscale multilayers
Abstract Sputter-deposited Zr/Nb nanoscale metallic multilayers with a periodicity of 27 (thin)
and 96 nm (thick) were subjected to Cu+ implantation with low and high fluences and then …
and 96 nm (thick) were subjected to Cu+ implantation with low and high fluences and then …
6H-SiC blistering efficiency as a function of the hydrogen implantation fluence
N Daghbouj, BS Li, M Karlik, A Declemy - Applied Surface Science, 2019 - Elsevier
Blistering phenomenon by H implantation into 6H-SiC and high-temperature annealing is
only possible in a surprisingly narrow window of ion fluence. By combining experimental …
only possible in a surprisingly narrow window of ion fluence. By combining experimental …
Efficient ion-slicing of InP thin film for Si-based hetero-integration
Integration of high quality single crystalline InP thin film on Si substrate has potential
applications in Si-based photonics and high-speed electronics. In this work, the exfoliation of …
applications in Si-based photonics and high-speed electronics. In this work, the exfoliation of …
Blister formation in He-H co-implanted InP: A comprehensive atomistic study
N Daghbouj, J Lin, HS Sen, M Callisti, B Li… - Applied Surface …, 2021 - Elsevier
The blistering efficiency in He-H-ions co-implanted and annealed InP has been found to
peak and vanish in a narrow range of ion fluence ratio (Φ H/Φ He= 1. 5–3. 5) with a fixed He …
peak and vanish in a narrow range of ion fluence ratio (Φ H/Φ He= 1. 5–3. 5) with a fixed He …
Blistering kinetics in H-implanted 4H-SiC for large-area exfoliation
Layer transfer of single-crystalline SiC based on layer splitting and wafer bonding on an
alternate substrate is a viable approach to fabricate SiC power devices at a lower cost …
alternate substrate is a viable approach to fabricate SiC power devices at a lower cost …
Three-dimensional X-FEM modeling of crack coalescence phenomena in the Smart CutTM technology
Abstract A new 3D X-FEM approach is proposed to model crack coalescence phenomena in
the Smart Cut TM technology. An adaptive mesh is developed based on a 3D fractal mesh …
the Smart Cut TM technology. An adaptive mesh is developed based on a 3D fractal mesh …
Xenon Nanobubbles and Residual Defects in Annealed Xe‐Implanted Si (001): Analysis by the Combination of Advanced Synchrotron X‐Ray Diffraction and …
Residual crystalline defects on the subsurface of Xe‐implanted Si (001) and post‐annealed
substrates are investigated by advanced X‐ray diffraction and transmission electron …
substrates are investigated by advanced X‐ray diffraction and transmission electron …