Recent developments and prospects of fully recessed MIS gate structures for GaN on Si power transistors
P Fernandes Paes Pinto Rocha, L Vauche… - Energies, 2023 - mdpi.com
For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN
heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two …
heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two …
The fundamental surface science of wurtzite gallium nitride
VM Bermudez - Surface Science Reports, 2017 - Elsevier
A review is presented that covers the experimental and theoretical literature relating to the
preparation, electronic structure and chemical and physical properties of the surfaces of the …
preparation, electronic structure and chemical and physical properties of the surfaces of the …
Highly efficient and damage-free polishing of GaN (0 0 0 1) by electrochemical etching-enhanced CMP process
L Zhang, H Deng - Applied Surface Science, 2020 - Elsevier
An electrochemical etching-enhanced CMP process was proposed to realize the highly
efficient and damage-free finishing of GaN. In this process, electrochemical etching was first …
efficient and damage-free finishing of GaN. In this process, electrochemical etching was first …
Study of corrosion rate control mechanism based on magnetorheological electro-Fenton composite polishing of single-crystal GaN wafers
Y Wu, J Pan, H Wang, Z Shen, T Luan… - Journal of Solid State …, 2023 - Springer
A magnetorheological electro-Fenton composite polishing technology was proposed that
enables chemical and mechanical “double enhancement” of the machining process to …
enables chemical and mechanical “double enhancement” of the machining process to …
Charge transfer-induced enhancement of a Raman signal in a hybrid Ag–GaN nanostructure
K Upadhyaya, S Sharvani, N Ayachit… - RSC advances, 2019 - pubs.rsc.org
A hybrid system consisting of Ag nanoparticles dispersed onto a GaN nanowall network
(GaN NWN) exhibited characteristic optical properties and electronic band structure. Surface …
(GaN NWN) exhibited characteristic optical properties and electronic band structure. Surface …
Comparison of optoelectronic properties of epitaxial and non-epitaxial GaN nanostructures
Structural, optical and surface properties of epitaxially grown 2D GaN nanowall network
using Molecular Beam Epitaxy have been compared to those of non-epitaxially grown single …
using Molecular Beam Epitaxy have been compared to those of non-epitaxially grown single …
Stress induced modification of electronic band structure and enhanced optical emission in 1-D GaN nanostructures
dimensional GaN nanowires (NW) and nanorods (NR) grown using catalyst assisted
Chemical Vapour Deposition are investigated for their structural and optical properties, and …
Chemical Vapour Deposition are investigated for their structural and optical properties, and …
Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System
R Huang, F Li, T Liu, Y Zhao, Y Zhu, Y Shen, X Lu… - Scientific Reports, 2018 - nature.com
Contact property is now becoming to be a key factor for achieving high performance and
high reliability in GaN-based III-V semiconductor devices. Energetic ion sputter, as an …
high reliability in GaN-based III-V semiconductor devices. Energetic ion sputter, as an …
Ag/GaN hybrid nanostructures for optoelectronics applications
K Upadhyaya, N Ayachit… - Journal of Physics …, 2020 - iopscience.iop.org
A hybrid system consisting of Ag nanoparticles dispersed on GaN nanowall network (GaN
NWN) exhibits its characteristic optical properties and electronic band structure. XPS studies …
NWN) exhibits its characteristic optical properties and electronic band structure. XPS studies …