Towards oxide electronics: a roadmap

M Coll, J Fontcuberta, M Althammer, M Bibes… - Applied surface …, 2019 - orbit.dtu.dk
At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …

Nanoionic memristive phenomena in metal oxides: the valence change mechanism

R Dittmann, S Menzel, R Waser - Advances in Physics, 2021 - Taylor & Francis
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Memristive devices for computing

JJ Yang, DB Strukov, DR Stewart - Nature nanotechnology, 2013 - nature.com
Memristive devices are electrical resistance switches that can retain a state of internal
resistance based on the history of applied voltage and current. These devices can store and …

[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches

JS Lee, S Lee, TW Noh - Applied Physics Reviews, 2015 - pubs.aip.org
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

Y Yang, P Gao, L Li, X Pan, S Tappertzhofen… - Nature …, 2014 - nature.com
Nanoscale metal inclusions in or on solid-state dielectrics are an integral part of modern
electrocatalysis, optoelectronics, capacitors, metamaterials and memory devices. The …

Silicon Oxide (SiOx): A Promising Material for Resistance Switching?

A Mehonic, AL Shluger, D Gao, I Valov… - Advanced …, 2018 - Wiley Online Library
Interest in resistance switching is currently growing apace. The promise of novel high‐
density, low‐power, high‐speed nonvolatile memory devices is appealing enough, but …

Status and prospects of ZnO-based resistive switching memory devices

FM Simanjuntak, D Panda, KH Wei… - Nanoscale research letters, 2016 - Springer
In the advancement of the semiconductor device technology, ZnO could be a prospective
alternative than the other metal oxides for its versatility and huge applications in different …

Oxide-based resistive switching-based devices: fabrication, influence parameters and applications

R Khan, N Ilyas, MZM Shamim, MI Khan… - Journal of Materials …, 2021 - pubs.rsc.org
In advanced computing technologies, metal oxide-based resistive switching random access
memory (RRAM) has been considered an excellent scientific research interest in the areas …

Two-Terminal MoS2 Memristor and the Homogeneous Integration with a MoS2 Transistor for Neural Networks

S Fu, JH Park, H Gao, T Zhang, X Ji, T Fu, L Sun… - Nano Letters, 2023 - ACS Publications
Memristors are promising candidates for constructing neural networks. However, their
dissimilar working mechanism to that of the addressing transistors can result in a scaling …

Resistive switching in silicon suboxide films

A Mehonic, S Cueff, M Wojdak, S Hudziak… - Journal of Applied …, 2012 - pubs.aip.org
We report a study of resistive switching in a silicon-based memristor/resistive RAM (RRAM)
device in which the active layer is silicon-rich silica. The resistive switching phenomenon is …