Third-generation approaches to photovoltaics (PVs) aim to achieve high-efficiency devices
but still use thin-film, second-generation deposition methods. The concept is to do this with …

We review recent progress towards increasing solar cell efficiencies beyond the Shockley‐
Queisser efficiency limit. Four main approaches are highlighted: multi‐junction cells …

A solar cell based on a hybrid nanowire–film architecture consisting of a vertically aligned
array of InGaN/GaN multi-quantum well core–shell nanowires which are electrically …

High-quality p-Ga N∕ i-In 0.1 Ga 0.9 N∕ n-Ga N heterojunctional epilayers are grown on
(0001)-oriented sapphire substrates by metal organic chemical vapor deposition. The …

We have performed a detailed investigation of the molecular beam epitaxial growth and
characterization of InN nanowires spontaneously formed on Si (111) substrates under …

In this paper, we report the first experimental demonstration of InN nanowire solar cells. By
employing an in situ deposited In seeding layer, we have achieved electronically pure …

GaN–InGaN core–shell nanowire array devices are characterized by spectrally resolved
scanning photocurrent microscopy (SPCM). The spatially resolved external quantum …

GaN nanowires are promising for optical and optoelectronic applications because of their
waveguiding properties and large optical band gap. However, developing a precise …

Efficient excitonic solar cells preferably require materials with an optical gap in the near-
infrared region and high absorption coefficients. Additionally, it is well-known that …

Indium gallium nitride (InGaN) alloys offer great potential for high-efficiency photovoltaics,
yet theoretical promise has not been experimentally demonstrated. Several major …