The turn of this century has undoubtedly brought in tremendous interest in the development of organic electronic and photonic devices. As an aid of understanding the physics behind …
Organic optoelectronic devices are usually driven by the electric field generated from an electrode potential difference or bias voltage. Although poled ferroelectric domains may …
M Iwamoto, T Manaka, D Taguchi - Journal of Physics D: Applied …, 2015 - iopscience.iop.org
The probing and modeling of carrier motions in materials as well as in electronic devices is a fundamental research subject in science and electronics. According to the Maxwell …
H Wu, J Li, W Ou-Yang - IEEE Transactions on Electron …, 2023 - ieeexplore.ieee.org
The field emission phenomenon is surface sensitive, and the tape pretreatment method has been commonly used to improve the disordered surface morphology of cathodes to boost …
Q Zhao, Y Ren, F Yang, J Li, F Wei, Y Li… - … Applied Materials & …, 2024 - ACS Publications
In this work, we investigate multistep ferroelectric polarization switching dynamics of a series of poly (vinylidene fluoride-trifluoroethylene)/polystyrene, P (VDF-TrFE)/PS, as active layers …
H Wu, S Shen, J Li, X Chen, Z Zhang, W Ou-Yang - Vacuum, 2020 - Elsevier
Boosted field emission (FE) cathodes of silicon carbide nanowires (SiC NWs) filled with polyaniline (PANI) and polypyrrole (PPY) coatings were prepared via cyclic voltammetry …
H Wu, S Shen, X Xu, C Qiao, X Chen… - … on Electron Devices, 2020 - ieeexplore.ieee.org
Although Ti 3 C 2 T x has been widely studied in applications such as electrical storage devices, there are very few reports about the field emission properties of Ti 3 C 2 T x. In this …
B Kam, X Li, C Cristoferi, ECP Smits… - Applied Physics …, 2012 - pubs.aip.org
In this work, we investigate the ferroelectric polarization state in metal-ferroelectric- semiconductor-metal structures and in ferroelectric field-effect transistors (FeFET). Poly …
The polarization modulation effect of the gate dielectric on the performance of metal-oxide- semiconductor field-effect transistors has been investigated for more than a decade …