Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system
Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
GaN: Eu, O-based resonant-cavity light emitting diodes with conductive AlInN/GaN distributed Bragg reflectors
T Inaba, J Tatebayashi, K Shiomi… - ACS Applied …, 2020 - ACS Publications
We demonstrate a GaN: Eu, O-based resonant-cavity light emitting diode (RCLED)
fabricated with a n-type conductive Al0. 82In0. 18N/GaN bottom-distributed Bragg reflector …
fabricated with a n-type conductive Al0. 82In0. 18N/GaN bottom-distributed Bragg reflector …
[PDF][PDF] Fabrication of electrically pumped vertical cavity surface emitters employing GaN: Mg/GaN: Ge tunnel junction contacts
C Seneza - 2022 - opendata.uni-halle.de
This thesis investigates novel concepts for the realization of vertical cavity surface emitting
lasers (VCSEL) for the blue spectral range. Among them are the p-doping scheme at the p++ …
lasers (VCSEL) for the blue spectral range. Among them are the p-doping scheme at the p++ …
Fabrication of vertically conducting near ultraviolet LEDs on SiC substrates
X Han, Y Zhang, P Li, L Yan, G Deng, L Chen… - Superlattices and …, 2019 - Elsevier
In this work, GaN-based vertically conducting near ultraviolet light-emitting diodes (LEDs)
were grown on n-SiC substrates by metal-organic chemical vapor deposition. 10 pairs or 20 …
were grown on n-SiC substrates by metal-organic chemical vapor deposition. 10 pairs or 20 …
Vertical electrical conductivity of ZnO/GaN multilayers for application in distributed bragg reflectors
We have demonstrated an electrically conductive ZnO/GaN multilayer structure using hybrid
plasma-assisted molecular beam epitaxy. Electrical IV characteristics were measured …
plasma-assisted molecular beam epitaxy. Electrical IV characteristics were measured …
III-nitride heterostructures as infrared emitters/submitted by Dipl.-Ing. Dmytro Kysylychyn
D Kysylychyn - 2018 - epub.jku.at
Owing to the remarkable structural, optical and magnetic properties, III-nitride-based
materials, eventually doped with magnetic elements, have become technologically relevant …
materials, eventually doped with magnetic elements, have become technologically relevant …
[引用][C] III-nitride heterostructures as infrared emitters
D Kysylychyn - 2018 - inis.iaea.org
CALCULATION METHODS, COHERENT SCATTERING, CRYSTAL GROWTH METHODS,
DIFFRACTION, ELECTROMAGNETIC RADIATION, ELECTRON MICROSCOPY …
DIFFRACTION, ELECTROMAGNETIC RADIATION, ELECTRON MICROSCOPY …