Integration technology of micro-led for next-generation display
D Chen, YC Chen, G Zeng, DW Zhang, HL Lu - Research, 2023 - spj.science.org
Inorganic micro light-emitting diodes (micro-LEDs) based on III-V compound semiconductors
have been widely studied for self-emissive displays. From chips to applications, integration …
have been widely studied for self-emissive displays. From chips to applications, integration …
[PDF][PDF] High-speed visible light communication based on micro-LED: A technology with wide applications in next generation communication
T Lu, X Lin, W Guo, CC Tu, S Liu, CJ Lin… - Opto-Electronic …, 2022 - researching.cn
The evolution of next-generation cellular networks is aimed at creating faster, more reliable
solutions. Both the next-generation 6G network and the metaverse require high transmission …
solutions. Both the next-generation 6G network and the metaverse require high transmission …
The micro-LED roadmap: status quo and prospects
Micro light-emitting diode (micro-LED) will play an important role in the future generation of
smart displays. They are found very attractive in many applications, such as maskless …
smart displays. They are found very attractive in many applications, such as maskless …
An ultrahigh efficiency excitonic micro-LED
High efficiency micro-LEDs, with lateral dimensions as small as one micrometer, are desired
for next-generation displays, virtual/augmented reality, and ultrahigh-speed optical …
for next-generation displays, virtual/augmented reality, and ultrahigh-speed optical …
Green InGaN quantum dots breaking through efficiency and bandwidth bottlenecks of micro‐LEDs
Micro‐LEDs are regarded as ideal light sources for next‐generation display and high‐speed
visible‐light communication (VLC). However, the conventional micro‐LEDs based on InGaN …
visible‐light communication (VLC). However, the conventional micro‐LEDs based on InGaN …
Analysis of size dependence and the behavior under ultrahigh current density injection condition of GaN-based Micro-LEDs with pixel size down to 3 μm
In this paper, the GaN-based green micro light-emitting diodes (Micro-LEDs) with various
sizes (from 3 to 100 μm) were fabricated and electro-optically characterized. Atom layer …
sizes (from 3 to 100 μm) were fabricated and electro-optically characterized. Atom layer …
[HTML][HTML] Growth of highly relaxed InGaN pseudo-substrates over full 2-in. wafers
P Chan, SP DenBaars, S Nakamura - Applied Physics Letters, 2021 - pubs.aip.org
A highly relaxed InGaN buffer layer was demonstrated over a full two-inch c-plane sapphire
substrate by metalorganic chemical vapor deposition. The InGaN buffer layer was grown on …
substrate by metalorganic chemical vapor deposition. The InGaN buffer layer was grown on …
Recent progress on micro-LEDs
With the advent of technologies such as augmented/virtual reality (AR/VR) that are moving
towards displays with high efficiency, small size, and ultrahigh resolution, the development …
towards displays with high efficiency, small size, and ultrahigh resolution, the development …
Ultrasmall, ultracompact and ultrahigh efficient InGaN micro light emitting diodes (μLEDs) with narrow spectral line width
Augmented reality and visual reality (AR and VR) microdisplays require micro light emitting
diodes (μLEDs) with an ultrasmall dimension (≤ 5 μm), high external quantum efficiency …
diodes (μLEDs) with an ultrasmall dimension (≤ 5 μm), high external quantum efficiency …
Research progress of micro-LED display technology
S Zhang, H Zheng, L Zhou, H Li, Y Chen, C Wei, T Wu… - Crystals, 2023 - mdpi.com
Micro-LED display technology is considered to be the next generation of display technology,
which has the characteristics of high miniaturization, thin film and integration, as well as the …
which has the characteristics of high miniaturization, thin film and integration, as well as the …