Theory of semiconductor superlattice electronic structure

DL Smith, C Mailhiot - Reviews of Modern Physics, 1990 - APS
The authors review the theory of semiconductor superlattice electronic structure. First a
survey of theoretical methods is presented. These methods can be divided into two general …

Band offsets in lattice-matched heterojunctions: a model and first-principles calculations for GaAs/AlAs

A Baldereschi, S Baroni, R Resta - Physical review letters, 1988 - APS
A new model for band offsets in lattice-matched heterojunctions is presented along with a
novel definition of the interface dipole which avoids any reference to an ideal interface. The …

Heterojunction band offset engineering

A Franciosi, CG Van de Walle - Surface Science Reports, 1996 - Elsevier
Control of band discontinuities in semiconductor heterostructures may introduce a new
important degree of freedom in the design of heterojunction devices and allow independent …

Carrier dynamics and recombination mechanisms in staggered-alignment heterostructures

BA Wilson - IEEE journal of quantum electronics, 1988 - ieeexplore.ieee.org
The experimental and theoretical work on carrier dynamics and recombination mechanisms
in semiconductor heterostructures with staggered type II alignments is reviewed. Examples …

Structural and electronic properties of narrow-band-gap semiconductors: InP, InAs, and InSb

S Massidda, A Continenza, AJ Freeman… - Physical Review B, 1990 - APS
The structural and electronic properties of the narrow-band-gap zinc-blende-structure III-V
semiconductors InP, InAs, and InSb are studied with two first-principles schemes: the full …

Electronic states and Schottky barrier height at metal/MgO (100) interfaces

J Goniakowski, C Noguera - Interface science, 2004 - Springer
Using an ab initio total energy approach, we study the electronic structure of metal/MgO
(100) interfaces. By considering simple and transition metals, different adsorption sites and …

Establishing the limits of efficiency of perovskite solar cells from first principles modeling

O Grånäs, D Vinichenko, E Kaxiras - Scientific Reports, 2016 - nature.com
The recent surge in research on metal-halide-perovskite solar cells has led to a seven-fold
increase of efficiency, from~ 3% in early devices to over 22% in research prototypes. Oft …

Schottky barriers at transition-metal/ interfaces

M Mrovec, JM Albina, B Meyer, C Elsässer - Physical Review B—Condensed …, 2009 - APS
Schottky barrier heights were calculated for a series of interfaces between transition metals
and strontium titanate with the first-principles mixed-basis pseudopotential method based on …

Band gap engineering of wurtzite and zinc-blende GaN/AlN superlattices from first principles

XY Cui, B Delley, C Stampfl - Journal of Applied Physics, 2010 - pubs.aip.org
Based on all-electron density functional theory calculations, we systematically investigate
the electronic structure of (0001)-oriented wurtzite (wz) and (111)-,(100)-, and (110)-oriented …

Polarization reduction in half-metallic Heusler alloys: the effect of point defects and interfaces with semiconductors

S Picozzi, AJ Freeman - Journal of Physics: Condensed Matter, 2007 - iopscience.iop.org
Half-metallic full-Heusler alloys represent a promising class of materials for spintronic
applications. However,(i) intrinsic point defects in Heusler compounds can be detrimental …