We have studied the admittance and current–voltage characteristics of the Au/Ti/Al 2 O 3/n-
GaAs structure. The Al 2 O 3 layer of about 5 nm was formed on the n-GaAs by atomic layer …

Hafnium oxide thin films consist of trap states which can degrade or enhance the device
performance depending upon the application. These trap states play a crucial role in silicon …

Electronic and dielectric properties of vapor-phase grown MoS2 have been investigated in
metal/MoS2/silicon capacitor structures by capacitance–voltage and conductance-voltage …

The Si/SiO 2 interface is populated by isolated trap states that modify its electronic
properties. These traps are of critical interest for the development of semiconductor-based …

High-k Al 2 O 3 with metallic oxide thickness of about 3 nm on n-type GaAs substrate has
been deposited by the atomic layer deposition (ALD) technique. Thus, it has been formed …

An analysis of frequency dispersion in capacitance and conductance of gate‐source contact
of AlGaN/GaN HEMT was performed. Capacitance and conductance were measured at …

Admittance spectroscopy is extended for measuring capacitance and conductance on metal-
oxide-semiconductor (MOS) structures as a function of gate voltage, frequency, and …

The authors investigated the optimal growth conditions for atomic layer deposition of La 2 O
3 using tris (iso-propylcyclopentadienyl) lanthanum, La (i PrCp) 3, and H 2 O, and identified …

We present a method for assessing the quality of electronic material properties of thin-film
metal–oxide–semiconductor field-effect transistors (MOSFETs). By investigating samples …

In this study, Al/TiO2/p-Si/Al heterojunction is fabricated and investigated some electrical
and dielectriccharacteristics. Atomic layer deposition technique was used for synthesize of …