Level one electronics packaging is traditionally defined as the design and production of the
encapsulating structure that provides mechanical support, environmental protection …

Through‑silicon via (TSV) is one of the most important features in 3D integrated circuit (IC)
and 2.5 D packaging. Both are within the advanced packaging topic for the digital and …

The investigation of crosstalk issues for coupled through silicon vias (TSVs) in ternary logic
is presented in this study. The crosstalk issues are analyzed for coupled TSVs utilizing multi …

Having a 1D material like Multiwall Carbon Nanotube (MWCNT) as a potential candidate for
high speed Very Large Scale Integration (VLSI) interconnect creates a good scope to reduce …

This article proposes a novel differential through-silicon via (D-TSV) structure, which is filled
with vertically aligned carbon nanotube (VACNT) array. Two metal pads are deposited on …

A comparative radio‐frequency (RF) and crosstalk analysis is performed on carbon nano‐
interconnects based on an efficient π‐type equivalent single‐conductor model of bundled …

A CMOS inverter driven equivalent single conductor model of capacitively coupled mixed
CNT bundle (MCB) interconnects are taken to analyze the crosstalk induced time domain …

This paper discourses the variations in methods of fabrication and modeling of Through-
Silicon Vias (TSVs) in chronological order. Three-dimensional (3D) integration is an …

This paper presents an investigation of crosstalk issues for coupled heterogeneous coaxial
through silicon vias (HCTSVs) in ternary logic. Crosstalk issues are investigated for coupled …

The performance of three-dimensional integrated circuits primarily depends on the filler
material used in the through-silicon vias (TSVs). The most widely used filler material is Cu …