With the development of microelectronics, the demand for continuously miniaturized feature
sizes has driven continuous progress in lithography technology. Extreme ultraviolet (EUV) …

Continuous ongoing development of dense integrated circuits requires significant
advancements in nanoscale patterning technology. As a key process in semiconductor high …

This report describes recent developments and current needs in the field of high-resolution
photopolymers and photomolecules briefly describing prior generation lithographic …

This work shows a great influence on the EUV performance of hafnium carboxylate clusters
via slight structural modification. Treatment of hexameric hafnium clusters Hf6O4 (OH) 4 …

Hybrid metal–organic cluster resist materials, also termed as organo-inorganics,
demonstrate their potential for use in next-generation lithography owing to their ability for …

Organic–inorganic hybrid resists are emerging as an effective way of addressing stringent
process requirements for aggressive down-scaling of semiconducting devices. However …

Organic–inorganic hybrid resists offer a solution to the issue of low sensitivity in organic
photoresists like poly (methyl methacrylate)(PMMA). In this study, an organic–inorganic …

Herein, carbon nano-onions (CNOs) were covalently functionalized with mercaptophenyl
methacrylate (MPMA) and ultra-high molecular weight polyethylene/functionalized carbon …

Given the need for a next-generation technology node in the area of integrated circuits (ICs),
improvement in the properties of resist materials, particularly sensitivity (ED), resolution …

Metal oxo clusters have drawn a great deal of attention as the extreme‐ultraviolet (EUV)
photoresists. However, industrial implementation in the next‐generation lithography …