Hydrogenated h-CSe as a promising 2D direct semiconductor for optoelectronic applications

X Zhou, L Qian, H Huang, Z Yuan, Y Hu - Physica B: Condensed Matter, 2024 - Elsevier
Two-dimensional (2D) materials are playing an increasingly important role in manufacturing
new and efficient nanoelectronic devices owing to their unique properties [[1],[2],[3],[4]]. The …

Design of silicon-on-insulator field-effect transistor using graphene channel to improve short channel effects over conventional devices

VP Tayade, SL Lahudkar - International Journal of Advanced …, 2023 - search.proquest.com
The conventional silicon channel metal oxide semiconductor field effect transistor (MOSFET)
has fundamental limits that are reached due to scalability, resulting in short-channel effects …

Study of conductance in graphene nanochannels for symmetric and asymmetric junction configurations

S Patra, AK Sahu, M Mishra, R Swain… - Microsystem Technologies, 2024 - Springer
The transport properties of graphene nanochannels have been studied for symmetric and
asymmetric junction configurations using an open-source Python-based tool “Kwant”. In the …

Novel nanoelectronic circuits and systems

K Rallis - 2024 - upcommons.upc.edu
(English) Lately, in the rise of the era of 2D materials, Graphene is one of the materials that
has been extensively investigated for its possible integration in computing devices and thus …