“Regrowth-free” fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with Npn configuration
T Kumabe, H Watanabe, Y Ando, A Tanaka… - Applied Physics …, 2022 - iopscience.iop.org
Abstract An AlGaN/GaN heterojunction bipolar transistor (HBT) with Npn configuration was
fabricated by the" regrowth-free" method, resulting in a contamination-free emitter-base …
fabricated by the" regrowth-free" method, resulting in a contamination-free emitter-base …
AlGaN/GaN heterojunction bipolar transistor with selective-area grown emitter and improved base contact
L Zhang, Z Cheng, J Zeng, H Lu, L Jia… - … on Electron Devices, 2019 - ieeexplore.ieee.org
We report AlGaN/GaN npn heterojunction bipolar transistors (HBTs) on sapphire substrates
with selective-area grown AlGaN emitters by metal-organic chemical vapor deposition. Metal …
with selective-area grown AlGaN emitters by metal-organic chemical vapor deposition. Metal …
Working toward high-power GaN/InGaN heterojunction bipolar transistors
Abstract III-nitride (III-N) heterojunction bipolar transistors (HBTs) are a less-explored
electronic device technology due to the myriad research issues in material growth, device …
electronic device technology due to the myriad research issues in material growth, device …
GaN/InGaN heterojunction bipolar transistors with ultra‐high dc power density (>3 MW/cm2)
YC Lee, Y Zhang, ZM Lochner, HJ Kim… - … status solidi (a), 2012 - Wiley Online Library
We report ultra‐high‐power performance on npn GaN/InGaN double heterojunction bipolar
transistors (DHBTs) that is directly grown on a free‐standing (FS) GaN substrate. Measured …
transistors (DHBTs) that is directly grown on a free‐standing (FS) GaN substrate. Measured …
Selective injection AlGaN/GaN heterojunction bipolar transistors with patterned regrown base contacts
We demonstrate graded AlGaN/GaN heterojunction bipolar transistors (HBTs) with selective
injection of minority carriers across a p-GaN base and patterned regrown base contacts. The …
injection of minority carriers across a p-GaN base and patterned regrown base contacts. The …
III-N high-power bipolar transistors
We report state-of-the-art dc and RF performance of GaN/InGaN npn DHBTs grown by the
MOCVD technology on sapphire substrates. The fabricated GaN/InGaN HBTs achieved a …
MOCVD technology on sapphire substrates. The fabricated GaN/InGaN HBTs achieved a …
Characteristics of blue GaN/InGaN quantum-well light-emitting transistor
HY Lan, IC Tseng, YH Lin, SW Chang… - IEEE Electron Device …, 2019 - ieeexplore.ieee.org
We demonstrate simultaneous electrical and optical modulations of the first GaN/InGaN
quantum-well light-emitting transistor (QW-LET) which contains an In0. 15 Ga0. 85N QW in …
quantum-well light-emitting transistor (QW-LET) which contains an In0. 15 Ga0. 85N QW in …
Small-Signal, High Frequency Performance of Vertical GaN FinFETs with fmax = 5.9 GHz
GaN vertical finFETs are capable of high breakdown voltages and large current density
without the need for regrowth or p-type doping. These attributes make them a promising …
without the need for regrowth or p-type doping. These attributes make them a promising …
[图书][B] Gan Junction Devices for Microwave and Power Electronics
S Stein - 2023 - search.proquest.com
The electronic properties of GaN make it a desirable candidate for microwave and power
semiconductor devices. The wide bandgap provides a high breakdown electric field which …
semiconductor devices. The wide bandgap provides a high breakdown electric field which …
Radiative recombination in GaN/InGaN heterojunction bipolar transistors
We report an electroluminescence (EL) study on npn GaN/InGaN heterojunction bipolar
transistors (HBTs). Three radiative recombination paths are resolved in the HBTs …
transistors (HBTs). Three radiative recombination paths are resolved in the HBTs …