Tunnel FET technology: A reliability perspective
Abstract Tunneling-field-effect-transistor (TFET) has emerged as an alternative for
conventional CMOS by enabling the supply voltage (V DD) scaling in ultra-low power …
conventional CMOS by enabling the supply voltage (V DD) scaling in ultra-low power …
A review of III-V Tunnel Field Effect Transistors for future ultra low power digital/analog applications
M Saravanan, E Parthasarathy - Microelectronics Journal, 2021 - Elsevier
Abstract Tunnel Field Effect Transistors (TFETs) have emerged as serious contenders for the
replacement of traditional MOSFET technology for the future ultra low power Analog/Digital …
replacement of traditional MOSFET technology for the future ultra low power Analog/Digital …
[图书][B] Fundamentals of tunnel field-effect transistors
During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
III–V compound semiconductor transistors—from planar to nanowire structures
Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …
device roadmap to further improve future performance increases of integrated circuits is …
Double-gate TFET with vertical channel sandwiched by lightly doped Si
This paper examines a tunnel field-effect transistor (TFET) as a promising device for
achieving steeper switching and better electrical performances in low-power operation. It …
achieving steeper switching and better electrical performances in low-power operation. It …
Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V
Vertical tunnel field-effect transistors (TFETs) in which the gate field is aligned with the
tunneling direction have been fabricated using a novel gate-recess process, resulting in …
tunneling direction have been fabricated using a novel gate-recess process, resulting in …
Fabrication and Analysis of a Heterojunction Line Tunnel FET
AM Walke, A Vandooren, R Rooyackers… - … on Electron Devices, 2014 - ieeexplore.ieee.org
This paper presents a new integration scheme to fabricate a Si/Si 0.55 Ge 0.45
heterojunction line tunnel field effect transistor (TFET). The device shows an increase in …
heterojunction line tunnel field effect transistor (TFET). The device shows an increase in …
AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 at 0.5 V
Record high on-current of 78 μA/μm in a tunnel field-effect transistor (TFET) is achieved at
0.5 V at room temperature. The TFET employs a staggered AlGaSb/InAs heterojunction with …
0.5 V at room temperature. The TFET employs a staggered AlGaSb/InAs heterojunction with …
T-shaped III-V heterojunction tunneling field-effect transistor
PK Dubey, BK Kaushik - IEEE Transactions on Electron …, 2017 - ieeexplore.ieee.org
In this paper, we propose and investigate a novel heterojunction T-shaped tunneling field-
effect transistor (TTFET) using Sentaurus technology computer-aided design (TCAD) …
effect transistor (TTFET) using Sentaurus technology computer-aided design (TCAD) …
Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor
The single particle tunneling in a vertical stack consisting of monolayers of two-dimensional
semiconductors is studied theoretically, and its application to a novel Two-dimensional …
semiconductors is studied theoretically, and its application to a novel Two-dimensional …