Monolithically integrated InGaAs microdisk lasers on silicon using template-assisted selective epitaxy

S Mauthe, B Mayer, M Sousa, G Villares… - Nanophotonics …, 2018 - spiedigitallibrary.org
As performance and power consumption of modern micro-chips are increasingly limited by
electrical on-chip interconnects, all-optical interconnect systems promise data transmission …

A new method to determine the thermal resistance in semiconductor lasers

R Pernas, M Sanchez, R Pena-Sierra… - Proceedings of the …, 2002 - ieeexplore.ieee.org
A new method is presented to measure the thermal resistance (R/sub th/) of semiconductor
lasers. We show that knowing the applied junction voltage, the electrical series resistance …

Efficiencies in multiquantum well lasers

I Camps, M Sanchez, JC Gonzalez - Semiconductor science and …, 2002 - iopscience.iop.org
In this work, we analysed the cavity length dependence of the internal, differential and power
conversion efficiencies in AlGaAs/GaAs multiquantum well (MQW) lasers. We developed a …

About Kinks in AlGaAs lasers light-current characteristic

M Sanchez, JC Gonzalez, P Diaz… - … Physics Letters B, 2001 - World Scientific
The origin of the kinks in semiconductor lasers light-current characteristic (L (l)) is
theoretically alld experimentally analyzed. The devices are straight separate confinement …

Cavity length dependence of the peak conversion efficiency in AlGaAs lasers

M Sánchez, I Camps, JC González, P Diaz… - Journal of applied …, 1996 - pubs.aip.org
The dependence of the peak power conversion efficiency η c peak on the cavity length and
lasing wavelength is theoretically and experimentally analyzed for straight separate …

Theoretical study of the temperature dependence of threshold current in ZnSe based blue-green laser diodes

JC González, M Sánchez, P Díaz, O De Melo - Physica Scripta, 1997 - iopscience.iop.org
In this paper we calculate the temperature dependence of the threshold current density of Zn
1− x Cd x Se/ZnSe/ZnS y Se 1− y separate confinement double heterostructure quantum …

[PDF][PDF] Integrated High Brightness array semiconductor lasers incorporating multimode interference couplers

MK Murad - 2011 - theses.gla.ac.uk
The research described work in this thesis is concerned with the development and
realisation of high brightness array laser diodes operating in single spatial mode. The …

[PDF][PDF] Dependencia térmica de la corriente umbral en láseres semiconductores a pozo cuántico.

M Sánchez, NS Rojas, JA Martin, E Mon - Revista Cubana de Física, 2009 - biblat.unam.mx
Se presenta un estudio de la dependencia térmica de la corriente umbral en láseres de
diferentes materiales haciendo énfasis los láseres en base a GaInNAs. En este caso se …

[引用][C] Thermal Dependence of the Threshold Current in Quantum Well Semiconductor Lasers

M Sánchez, NS Rojas, JA Martin, E Mon - Revista Cubana de Física, 2009

[引用][C] SEMICONDUCTOR LASERS

R Pernas, M Sánchez, R Peña-Sierra, A Escobosa