R Pernas, M Sanchez, R Pena-Sierra… - Proceedings of the …, 2002 - ieeexplore.ieee.org
A new method is presented to measure the thermal resistance (R/sub th/) of semiconductor lasers. We show that knowing the applied junction voltage, the electrical series resistance …
In this work, we analysed the cavity length dependence of the internal, differential and power conversion efficiencies in AlGaAs/GaAs multiquantum well (MQW) lasers. We developed a …
The origin of the kinks in semiconductor lasers light-current characteristic (L (l)) is theoretically alld experimentally analyzed. The devices are straight separate confinement …
The dependence of the peak power conversion efficiency η c peak on the cavity length and lasing wavelength is theoretically and experimentally analyzed for straight separate …
In this paper we calculate the temperature dependence of the threshold current density of Zn 1− x Cd x Se/ZnSe/ZnS y Se 1− y separate confinement double heterostructure quantum …
The research described work in this thesis is concerned with the development and realisation of high brightness array laser diodes operating in single spatial mode. The …
Se presenta un estudio de la dependencia térmica de la corriente umbral en láseres de diferentes materiales haciendo énfasis los láseres en base a GaInNAs. En este caso se …