Solid‐state lighting has made tremendous progress this past decade, with the potential to
make much more progress over the coming decade. In this article, the current status of solid …

Group-III-nitride semiconductors, including AlN, GaN, InN and their ternary, quaternary
compounds, are promising electronic and optoelectronic materials for the applications in …

Micro-light-emitting diodes (μLEDs) are getting much attention in display industry because of
their outstanding optical and electrical characteristics. μLEDs have several advantages over …

Over the past decade, advances in LEDs have enabled the potential for wide-scale
replacement of traditional lighting with solid-state light sources. If LED performance targets …

A novel technology for controlling the In composition of InGaN quantum wells on the same
wafer was developed, which paved the way for the monolithic integration of three-primary …

In recent years, GaN nanorods are emerging as a very promising novel route toward devices
for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices …

In a classical light source, such as a laser, the photon number follows a Poissonian
distribution. For quantum information processing and metrology applications, a non-classical …

The Ti-mask selective-area growth (SAG) of GaN nanocolumns was performed at the growth
temperature of 900° C, while decreasing the supplied nitrogen flow rate (QN2) from 3.5 to …

Conventional InGaN/GaN light-emitting diodes based on planar quantum well structures do
not allow for efficient long-wavelength operation beyond the blue region due to a strong …

We report the fabrication of a photonic platform consisting of single wire light-emitting diodes
(LED) and photodetectors optically coupled by waveguides. MOVPE-grown (metal–organic …