Chalcogenide phase change materials based on germanium-antimony-tellurides (GST-
PCMs) have shown outstanding properties in non-volatile memory (NVM) technologies due …

Phase change materials are materials that exist in at least two structurally distinct solid
phases, an amorphous and one (or more) crystalline phases. Many materials display phase …

The reversible phase transitions in phase-change memory devices can switch on the order
of nanoseconds, suggesting a close structural resemblance between the amorphous and …

We report on an inelastic (Raman) light scattering study of the local structure of amorphous
GeTe (a-GeTe) films. A detailed analysis of the temperature-reduced Raman spectra has …

Phase-change materials are successfully employed in optical data storage and are
becoming a promising candidate for future electronic storage applications. Despite the …

Several chalcogenide alloys exhibit a pronounced contrast between the optical absorption
in the metastable rocksalt and in the amorphous phase. This phenomenon is the basis for …

The liquid and amorphous structures of Ge 0.15 Te 0.85 and GeTe alloys are characterized
using combined density functional/molecular dynamics simulations. Te is threefold …

This paper investigates Carbon-doped GeTe (GeTeC) as novel material for Phase-Change
Memories (PCM). In the first part of the manuscript, a study of GeTeC blanket layers is …

Germanium telluride (GeTe) is a phase-change material (PCM) from chalcogenide family,
which undergoes reversible transition between amorphous and crystalline phase when …

Solid-state structural transformation coupled with an electronic property change is an
important mechanism for nonvolatile information storage technologies, such as phase …