Amorphous alloy space for perpendicular MTJs
(57) ABSTRACT A perpendicular magnetic tunnel junction (MTJ) apparatus includes a
tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel …
tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel …
RRAM cell structure with laterally offset BEVA/TEVA
CY Chang, WT Chu, KC Tu, L Yu-Wen… - US Patent …, 2015 - Google Patents
The present disclosure relates to a resistive random access memory (RRAM) cell
architecture, with off-axis or laterally offset top electrode via (TEVA) and bottom electrode via …
architecture, with off-axis or laterally offset top electrode via (TEVA) and bottom electrode via …
Amorphous spacerlattice spacer for perpendicular MTJs
K Lee, WC Chen, SH Kang - US Patent 9,214,624, 2015 - Google Patents
(57) ABSTRACT A perpendicular magnetic tunnel junction (MTJ) apparatus includes a
tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel …
tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel …
RRAM cell with bottom electrode
FT Sung, SC Liu, CS Tsai, L Yu-Wen, WT Chu… - US Patent …, 2015 - Google Patents
The present disclosure relates to a resistive random access memory (RRAM) cell having a
bottom electrode that provides for low leakage currents within the RRAM cell without using …
bottom electrode that provides for low leakage currents within the RRAM cell without using …
Topological method to build self-aligned MTJ without a mask
A method of forming a self-aligned MTJ without using a photolithography mask and the
resulting device are provided. Embodiments include forming a first electrode over a metal …
resulting device are provided. Embodiments include forming a first electrode over a metal …
RRAM cell with bottom electrode
FT Sung, CY Hsu, SC Liu - US Patent 9,209,392, 2015 - Google Patents
The present disclosure relates to a resistive random access memory (RRAM) cell having a
bottom electrode that provides for efficient switching of the RRAM cell, and an associated …
bottom electrode that provides for efficient switching of the RRAM cell, and an associated …
MRAM devices and methods of forming the same
CC Mo, SC Kuo, TH Lee, WA Weng, CY Lin - US Patent 9,972,771, 2018 - Google Patents
MRAM devices and methods of forming the same are provided. One of the MRAM devices
includes a dielectric layer, a resistance variable memory cell and a conductive layer. The …
includes a dielectric layer, a resistance variable memory cell and a conductive layer. The …
Dual encapsulation integration scheme for fabricating integrated circuits with magnetic random access memory structures
DPC Shum, H Cong, Y Jiang, JB Tan - US Patent 9,564,575, 2017 - Google Patents
Integrated circuits with magnetic random access memory (MRAM) and dual encapsulation
for double magnesium oxide tunnel barrier structures and methods for fabricating the same …
for double magnesium oxide tunnel barrier structures and methods for fabricating the same …
Forming self-aligned contacts on pillar structures
AJ Annunziata, DC Edelstein, EJ O'sullivan… - US Patent …, 2018 - Google Patents
A method of forming a semiconductor structure includes forming two or more pillar structures
over a top surface of a substrate. The method also includes forming two or more contacts to …
over a top surface of a substrate. The method also includes forming two or more contacts to …