Carrier lifetime in photoelectric processes is the average time an excited carrier is free
before recombining or trapping. Lifetime is directly related to defects and it is a key …

An experimental arrangement is described by which emission coefficient behavior
associated with deep‐level traps in semi‐insulating GaAs can be surveyed, from the …

We show that photo‐induced current transients in semi‐insulating GaAs are well fitted by a
unique sum of exponentials including the anomalous case, in which one of the exponentials …

Unusual behavior of pyroelectric current signal polarity near the Curie point (T c) was
observed for TlGaSe 2 a ferroelectric-semiconductor. It has been revealed that the polarity of …

An isothermal spectroscopic technique called time‐analyzed transient spectroscopy (TATS)
has been used to study photoinduced current transients in undoped semi‐insulating GaAs. It …

We discuss a novel approach to Deep Level Transient Spectroscopy (DLTS) in which the
emission of trapped minority carriers is analyzed employing the surface photovoltage (SPV) …

The surface photo voltage (SPV) and photocurrent (PC) transients as a result of the
excitation by the short high-intensity light pulses from semiconductor's intrinsic absorption …

Photo‐generated charge carriers can be detected by microwave absorption. This enables
non‐destructive measurements of photoconductivity with a spatial resolution depending on …

In the understanding of properties of deep levels in undoped bulk GaAs there are still
considerable deficiencies and obscurities. One example is the activation energy of the …

Scanning‐DLTS in the current detection mode with an applied bias is shown to be able to
detect spatial inhomogeneities of deep level defects in semi‐insulating materials with a high …