The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

Abstract In recent years, Gallium Nitride (GaN) has been established as a material of choice
for high power switching, high power RF and lighting applications. In c-direction, depending …

Growth of wurtzite Sc x Al 1− x N (x< 0.23) by plasma-assisted molecular-beam epitaxy on c-
plane GaN at high temperatures significantly alters the extracted lattice constants of the …

Thanks to its high refractive index contrast, band gap, and polarization mismatch compared
to GaN, In 0.17 Al 0.83 N layers lattice-matched to GaN are an attractive solution for …

Abstract Metal-polar In 0.17 Al 0.83 N barriers, lattice-matched to GaN, were grown under N-
rich conditions by plasma-assisted molecular beam epitaxy. The compositional homogeneity …

InAlN thin films grown on GaN/Al 2 O 3 (0001) templates by metal-organic vapor phase
epitaxy were studied by transmission electron microscopy techniques. V-defects in the form …

Wurtzite Sc x Al 1− x N/GaN (x= 0.13–0.18) multi-quantum wells grown by molecular beam
epitaxy on c-plane GaN are found to exhibit remarkably strong and narrow near-infrared …

The nearly lattice-matched In x Ga1− x N/In y Al1− y N epi-layers were grown on a GaN
template by plasma-assisted molecular beam epitaxy with a metal modulation technique …

Nominally lattice matched InAlN/GaN was grown by plasma-assisted molecular beam
epitaxy, and the intrinsic microstructure was investigated via x-ray diffraction, transmission …

We report a systematic and quantitative study of near-infrared intersubband absorption in
strained AlGaN/GaN and lattice-matched AlInN/GaN superlattices grown by plasma-assisted …