GaAsBi has been researched as a candidate material for optoelectronic devices for around
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …

A series of strained GaAsBi/GaAs multiple quantum well diodes are characterised to assess
the potential of GaAsBi for photovoltaic applications. The devices are compared with …

III/V semiconductors with cubic zinc-blende crystal structure, for example GaAs, GaP or InP,
become metastable if atoms with significantly smaller or larger covalent radius than the …

Abstract 100 nm thick GaAsBi layers were grown at a range of temperatures using both As 2
and As 4. Measurements of Bi incorporation based on room temperature …

A series of GaAsBi/GaAs multiple quantum well p–i–n diodes were grown by molecular
beam epitaxy. Nomarski images showed evidence of sub-surface damage in each diode …

The effect of rapid thermal annealing on the optical and structural properties of GaAsBi/GaAs
quantum wells (QWs) is investigated. The photoluminescence (PL) spectra of the samples …

This paper summarizes the present understanding of the growth of Ga (AsBi) on GaAs
substrates using metal organic vapor phase epitaxy (MOVPE). A growth model including Bi …

The optical and structural properties of GaAsBi bulk and quantum well (QW) samples grown
under various conditions were studied by photoluminescence (PL), high resolution x-ray …

In this work, we report on the epitaxial growth and characterization of the
GaAs/GaAsBi/GaAs pin structure. The samples were grown on a GaAs (001) substrate using …

GaAsBi/GaAs multiple quantum well (MQW) p–i–n diodes are grown by molecular beam
epitaxy. Transmission electron microscope images of the diodes show good agreement …