Si-rich SiNx based Kerr switch enables optical data conversion up to 12 Gbit/s
Silicon photonic interconnection on chip is the emerging issue for next-generation integrated
circuits. With the Si-rich SiNx micro-ring based optical Kerr switch, we demonstrate for the …
circuits. With the Si-rich SiNx micro-ring based optical Kerr switch, we demonstrate for the …
Mutlicolor electroluminescent Si quantum dots embedded in SiOx thin film MOSLED with 2.4% external quantum efficiency
The enhanced recombination and external quantum efficiency (EQE) of the multi-color metal-
oxide-semiconductor light-emitting diodes (MOSLEDs) made on the SiO_x film with buried …
oxide-semiconductor light-emitting diodes (MOSLEDs) made on the SiO_x film with buried …
White luminescence from sol–gel‐derived SiOC thin films
A Karakuscu, R Guider, L Pavesi… - Journal of the American …, 2009 - Wiley Online Library
A new approach to obtain visible luminescence from sol–gel‐derived SiOC films is
proposed. In order to investigate the influence of Si and C content, Si‐and C‐rich SiOC films …
proposed. In order to investigate the influence of Si and C content, Si‐and C‐rich SiOC films …
Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array
A silicon-nanocrystal (nc-Si) based metal-oxide-semiconductor light-emitting diode
(MOSLED) on Si nanopillar array with size, height, and density of 30 nm, 350 nm, and …
(MOSLED) on Si nanopillar array with size, height, and density of 30 nm, 350 nm, and …
All‐optical modulation based on silicon quantum dot doped SiOx:Si‐QD waveguide
All‐optical modulation based on silicon quantum dot doped SiOx: Si‐QD waveguide is
demonstrated. By shrinking the Si‐QD size from 4.3 nm to 1.7 nm in SiOx matrix (SiOx: Si …
demonstrated. By shrinking the Si‐QD size from 4.3 nm to 1.7 nm in SiOx matrix (SiOx: Si …
A novel method to fabricate silica nanotubes based on phase separation effect
Silica nanotubes were fabricated via single-nozzle electrospinning based on phase
separation effect. TEM and SEM results showed that the diameter of silica nanotubes ranged …
separation effect. TEM and SEM results showed that the diameter of silica nanotubes ranged …
Temperature dependence of photoluminescence in silicon quantum dots
X Wen, L Van Dao, P Hannaford - Journal of Physics D: Applied …, 2007 - iopscience.iop.org
The optical properties of silicon quantum dots (QDs) embedded in a SiO 2 matrix are
investigated at various temperatures using photoluminescence (PL) and time-resolved …
investigated at various temperatures using photoluminescence (PL) and time-resolved …
Morphological, compositional, structural, and optical properties of Si-nc embedded in SiO x films
JAL López, JC López, DEV Valerdi, GG Salgado… - Nanoscale research …, 2012 - Springer
Structural, compositional, morphological, and optical properties of silicon nanocrystal (Si-nc)
embedded in a matrix of non-stoichiometric silicon oxide (SiO x) films were studied. SiO x …
embedded in a matrix of non-stoichiometric silicon oxide (SiO x) films were studied. SiO x …
LaB6 nanoparticles with carbon-doped silica coating for fluorescence imaging and near-IR photothermal therapy of cancer cells
BH Lai, DH Chen - Acta Biomaterialia, 2013 - Elsevier
In this study, LaB6 nanoparticles are used as a novel nanomaterial for near-infrared (NIR)
photothermal therapy because they are cheaper than nanostructured gold, are easy to …
photothermal therapy because they are cheaper than nanostructured gold, are easy to …
High brightness silicon nanocrystal white light-emitting diode with luminance of 2060 cd/m2
YC Zhang, ZY Yu, XY Xue, FL Wang, S Li, XY Dai… - Optics …, 2021 - opg.optica.org
High brightness Si nanocrystal white light-emitting diodes (WLED) based on differentially
passivated silicon nanocrystals (SiNCs) are reported. The active layer was made by mixing …
passivated silicon nanocrystals (SiNCs) are reported. The active layer was made by mixing …