Progress and challenges towards terahertz CMOS integrated circuits
E Seok, D Shim, C Mao, R Han… - IEEE Journal of Solid …, 2010 - ieeexplore.ieee.org
Key components of systems operating at high millimeter wave and sub-millimeter
wave/terahertz frequencies, a 140-GHz fundamental mode voltage controlled oscillator …
wave/terahertz frequencies, a 140-GHz fundamental mode voltage controlled oscillator …
A broadband mm-wave and terahertz traveling-wave frequency multiplier on CMOS
A wideband frequency multiplier that effectively generates and combines the even
harmonics from multiple transistors is proposed. It takes advantage of standing-wave …
harmonics from multiple transistors is proposed. It takes advantage of standing-wave …
Millimeter-Wave Frequency Doubler With Transistor Grounded-Shielding Structure in SiGe BiCMOS Technology
L Wang, YZ Xiong, B Zhang, SM Hu… - IEEE Transactions on …, 2011 - ieeexplore.ieee.org
A low conversion-loss monolithic frequency doubler has been developed for D-band signal
generation in 0.13-μm SiGe BiCMOS technology. The circuit uses a single-transistor …
generation in 0.13-μm SiGe BiCMOS technology. The circuit uses a single-transistor …
Devices and circuits in CMOS for THz applications
Recent advances of CMOS technology and circuits have made it an alternative for realizing
capable and affordable THz systems. With process and circuit optimization, it should be …
capable and affordable THz systems. With process and circuit optimization, it should be …
A CMOS W-band× 4 frequency multiplier with cascading push-pull frequency doublers
L Ye, H Liao, R Huang - 2012 Asia Pacific Microwave …, 2012 - ieeexplore.ieee.org
This letter presents a CMOS W-band× 4 frequency multiplier with two cascading push-pull
frequency doublers for a W-band frequency synthesizer. A pseudodifferential class-B biased …
frequency doublers for a W-band frequency synthesizer. A pseudodifferential class-B biased …
Sub-millimeter wave signal generation and detection in CMOS
KO Kenneth, MCF Chang, M Shur… - 2009 IEEE MTT-S …, 2009 - ieeexplore.ieee.org
Feasibility of CMOS circuits operating at frequencies in the upper millimeter wave and low
sub-millimeter frequency regions has been demonstrated. A 140-GHz fundamental mode …
sub-millimeter frequency regions has been demonstrated. A 140-GHz fundamental mode …
100 GHz parametric CMOS frequency doubler
Z Zhao, JF Bousquet… - IEEE microwave and …, 2010 - ieeexplore.ieee.org
A parametric MOS varactor-based integrated frequency doubler is reported. The circuit is
implemented in 130 nm CMOS but uses a conservative 0.35 μm gate length and produces …
implemented in 130 nm CMOS but uses a conservative 0.35 μm gate length and produces …
Relations of time-varying circuit parameters and idlerless parametric harmonic generation for reconfigurable frequency multipliers
N Zhang, L Belostotski… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
The idlerless relations between parametric harmonic generation and time-varying circuit
parameters, such as elastance (), capacitance (), conductance (), and resistance (), are …
parameters, such as elastance (), capacitance (), conductance (), and resistance (), are …
Reconfigurable Frequency Multipliers Based on Complementary Ferroelectric Transistors
Frequency multipliers, a class of essential electronic components, play a pivotal role in
contemporary signal processing and communication systems. They serve as crucial building …
contemporary signal processing and communication systems. They serve as crucial building …
Schottky diodes in CMOS for terahertz circuits and systems
Y Zhang, R Han, Y Kim, DY Kim… - 2013 IEEE Radio …, 2013 - ieeexplore.ieee.org
Using Polysilicon Gate Separated Schottky Diode structures that can be fabricated without
any process modifications in a foundry digital 130-nm CMOS process, cut-off frequency of~ 2 …
any process modifications in a foundry digital 130-nm CMOS process, cut-off frequency of~ 2 …