Nanowire electronics: from nanoscale to macroscale
Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …
Compact modeling of transition metal dichalcogenide based thin body transistors and circuit validation
In this paper, we present a compact model for surface potential and drain current in
transition metal dichalcogenide (TMD) channel material-based n-type and p-type FETs. The …
transition metal dichalcogenide (TMD) channel material-based n-type and p-type FETs. The …
Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band
High-performance GeSn multiple-quantum-well (MQW) photodiode is demonstrated on a
200 mm Ge-on-insulator (GeOI) photonics platform for the first time. Both GeSn MQW active …
200 mm Ge-on-insulator (GeOI) photonics platform for the first time. Both GeSn MQW active …
Vertically stacked strained 3-GeSn-nanosheet pGAAFETs on Si using GeSn/Ge CVD epitaxial growth and the optimum selective channel release process
YS Huang, FL Lu, YJ Tsou, HY Ye… - IEEE Electron …, 2018 - ieeexplore.ieee.org
Fully compressively strained GeSn quantum-well channels sandwiched by Ge sacrificial
layers on 200-mm silicon-on-insulator (SOI) wafers are grown using chemical vapor …
layers on 200-mm silicon-on-insulator (SOI) wafers are grown using chemical vapor …
Unified compact model for nanowire transistors including quantum effects and quasi-ballistic transport
A Dasgupta, A Agarwal… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
We present a surface potential-based compact model for nanowire FETs, which considers 1-
D electrostatics along with the effect of multiple energy subbands. The model is valid for any …
D electrostatics along with the effect of multiple energy subbands. The model is valid for any …
High-κ Gate Dielectric on Tunable Tensile Strained Germanium Heterogeneously Integrated on Silicon: Role of Strain, Process, and Interface States
Tensile strained germanium (ε-Ge) layers heterogeneously integrated on Si substrates are
of technological importance for nanoscale transistors and photonics. In this work, the tunable …
of technological importance for nanoscale transistors and photonics. In this work, the tunable …
Self-induced ferroelectric 2-nm-thick Ge-doped HfO2 thin film applied to Ge nanowire ferroelectric gate-all-around field-effect transistor
YW Lin, CJ Sun, HH Chang, YH Huang, TY Yu… - Applied Physics …, 2020 - pubs.aip.org
This paper reports a self-induced ferroelectric 2-nm-thick Ge-doped HfO 2 (Ge: HfO 2) thin
film. Ge thermal desorption, incorporation into HfO 2, and further Ge: HfO 2 crystallization …
film. Ge thermal desorption, incorporation into HfO 2, and further Ge: HfO 2 crystallization …
Ge p-channel tunneling FETs with steep phosphorus profile source junctions
R Takaguchi, R Matsumura, T Katoh… - Japanese Journal of …, 2018 - iopscience.iop.org
The solid-phase diffusion processes of three n-type dopants, ie, phosphorus (P), arsenic
(As), and antimony (Sb), from spin-on-glass (SOG) into Ge are compared. We show that P …
(As), and antimony (Sb), from spin-on-glass (SOG) into Ge are compared. We show that P …
Vertical heterojunction Ge0. 92Sn0. 08/Ge gate-all-around nanowire pMOSFETs with NiGeSn contact
M Liu, K Mertens, N von den Driesch, V Schlykow… - Solid-State …, 2020 - Elsevier
Abstract Vertical heterojunction Ge 0.92 Sn 0.08/Ge gate-all-around (GAA) nanowire
pMOSFETs fabricated with a top-down approach are reported. With optimized processes …
pMOSFETs fabricated with a top-down approach are reported. With optimized processes …
Enhancement of Ge-based p-channel vertical FET performance by channel engineering using planar doping and a Ge/SixGe1–x–ySny heterostructure model for low …
Y Elogail, IA Fischer, T Wendav… - … Science and Technology, 2018 - iopscience.iop.org
High mobility materials are being studied to replace Si with the aim of enhancing the
performance of nanoelectronic devices. Ge and III–V channels have recently received a lot …
performance of nanoelectronic devices. Ge and III–V channels have recently received a lot …