Porous nitride semiconductors reviewed
PH Griffin, RA Oliver - Journal of Physics D: Applied Physics, 2020 - iopscience.iop.org
Porous nitride semiconductors are a fast-developing area of study, which open up a wide
range of new properties and applications, including strain free optical reflectors, chemical …
range of new properties and applications, including strain free optical reflectors, chemical …
Porous semiconductor compounds
In this review paper, we present a comparative analysis of the electrochemical dissolution of
III–V (InP, GaAs, GaN), II–VI (ZnSe, CdSe) and SiC semiconductor compounds. The …
III–V (InP, GaAs, GaN), II–VI (ZnSe, CdSe) and SiC semiconductor compounds. The …
Mesoporous GaN for Photonic Engineering Highly Reflective GaN Mirrors as an Example
A porous medium is a special type of material where voids are created in a solid medium.
The introduction of pores into a bulk solid can profoundly affect its physical properties and …
The introduction of pores into a bulk solid can profoundly affect its physical properties and …
High‐Q, Low‐Threshold Monolithic Perovskite Thin‐Film Vertical‐Cavity Lasers
Organometal halide perovskites (CH3NH3PbX3, where X= Cl, Br, I) have made
exceptionally rapid progress in optoelectronics in the past couple of years, catapulted mainly …
exceptionally rapid progress in optoelectronics in the past couple of years, catapulted mainly …
[HTML][HTML] Color-tunable< 10 μm square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates
In this study, two methods to tune the emission wavelength of micro-LEDs fabricated on tile
patterned compliant GaN-on-porous-GaN pseudo-substrates (PSs) are presented. The …
patterned compliant GaN-on-porous-GaN pseudo-substrates (PSs) are presented. The …
Porous GaN Nanopyramids: Advancing Beyond Conventional Nanostructures for High‐Brightness InGaN/GaN Quantum Wells Emission
H Thaalbi, B Kim, A Abdullah… - Advanced Functional …, 2024 - Wiley Online Library
GaN nanostructures hold significant promise in advancing nanoscale light‐emitting devices.
However, significant progress remains elusive, possibly due to the absence of innovative …
However, significant progress remains elusive, possibly due to the absence of innovative …
Nanopores in GaN by electrochemical anodization in hydrofluoric acid: Formation and mechanism
We report the use of hydrofluoric acid (HF) as an electrolyte in etching and porosifying GaN.
HF is found to be effective in rendering a wide range of nanoporous morphology, from …
HF is found to be effective in rendering a wide range of nanoporous morphology, from …
Room-temperature operation of c-plane GaN vertical cavity surface emitting laser on conductive nanoporous distributed Bragg reflector
Technological feasibility of III-nitride vertical cavity surface emitting laser (VCSEL) has been
hindered by the lack of an electrically conductive, easily manufacturable, wide reflection stop …
hindered by the lack of an electrically conductive, easily manufacturable, wide reflection stop …
[HTML][HTML] Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates
The compliant behavior of high fill-factor 10× 10 μm 2 square patterned 60–140 nm thick
GaN-on-porous-GaN tiles was demonstrated by utilizing porous GaN as a semi-flexible …
GaN-on-porous-GaN tiles was demonstrated by utilizing porous GaN as a semi-flexible …